Size effect and temperature dependence of spin conduction in Gd/SiN ultrathin film

Atushi Horiguchi, Tomokazu Matsuda, Yukio Watanabe

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The possibility of enhancing the resistivity while preserving magnetism is investigated by growing metal/insulator trilayers and superlattices, where the metal is Gd and the insulator is amorphous Si3N4 for the first time. A large size effect on Curie temperature (TC) is found in the susceptibility in contrast with Gd epitaxially grown on metals. TC decreases to 180 K, i.e., 70% of the bulk TC in 10 nm thick Gd film, which is attributed to an electrical isolation and surface states. On the other hand, the susceptibility χ at TC is almost unchanged as in epitaxial Gd on metal. The resistivity R doubled as the Gd layer thickness decreases from 100 to 10 nm, and the TC estimated from R agrees with that from χ. Additionally, a possible interlayer coupling or an effect of surface layers adjacent to Si3N4 was detected in superlattices.

Original languageEnglish
Pages (from-to)6603-6605
Number of pages3
JournalJournal of Applied Physics
Volume87
Issue number9 III
Publication statusPublished - May 1 2000
Externally publishedYes

Fingerprint

conduction
temperature dependence
metals
superlattices
insulators
magnetic permeability
electrical resistivity
preserving
thick films
Curie temperature
interlayers
isolation
surface layers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Size effect and temperature dependence of spin conduction in Gd/SiN ultrathin film. / Horiguchi, Atushi; Matsuda, Tomokazu; Watanabe, Yukio.

In: Journal of Applied Physics, Vol. 87, No. 9 III, 01.05.2000, p. 6603-6605.

Research output: Contribution to journalArticle

Horiguchi, Atushi ; Matsuda, Tomokazu ; Watanabe, Yukio. / Size effect and temperature dependence of spin conduction in Gd/SiN ultrathin film. In: Journal of Applied Physics. 2000 ; Vol. 87, No. 9 III. pp. 6603-6605.
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