Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits

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1 Citation (Scopus)


A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance Ron A reduction and high speed switching due to flat electric field distribution and low gate density by the slit oxide. Therefore, Slit FP power MOSFET achieves better RonA-Ron Qsw and RonA-Ron Qg tradeoff characteristics compared with conventional FP power MOSFET. TCAD simulation result shows 12% of Ron A, 11% of Ron Qsw, and 20% of Ron Qg can be reduced simultaneously by the Slit FP power MOSFET compared with the conventional FP power MOSFET at the lowest Ron A design.

Original languageEnglish
Article number9429711
Pages (from-to)552-556
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Publication statusPublished - 2021

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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