Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator

A. Ooato; T. Suzuki; J. H. Park; M. Miyao; T. Sadoh

doi:10.1016/j.tsf.2013.08.123

Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator

A. Ooato, T. Suzuki, J. H. Park, M. Miyao, T. Sadoh

Electronic Devices

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Low-temperature formation (∼ 150 °C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as catalyst to enhance the crystallization at low-temperatures. By annealing (150-200 °C) of a-Ge/Sn stacked structures formed on insulators, the composition distributions of Ge/Sn layers are inverted, and Sn/poly-Ge stacked structures are obtained. The results demonstrate that the crystallization occurs at 150 °C, which is slightly below the eutectic temperatures. This Sn-induced crystallization technique is useful to obtain poly-Ge on low-cost flexible substrates (softening temperature: ∼ 200 °C).

Original language	English
Pages (from-to)	155-158
Number of pages	4
Journal	Thin Solid Films
Volume	557
DOIs	https://doi.org/10.1016/j.tsf.2013.08.123
Publication status	Published - Apr 30 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2013.08.123

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title = "Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator",

abstract = "Low-temperature formation (∼ 150 °C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as catalyst to enhance the crystallization at low-temperatures. By annealing (150-200 °C) of a-Ge/Sn stacked structures formed on insulators, the composition distributions of Ge/Sn layers are inverted, and Sn/poly-Ge stacked structures are obtained. The results demonstrate that the crystallization occurs at 150 °C, which is slightly below the eutectic temperatures. This Sn-induced crystallization technique is useful to obtain poly-Ge on low-cost flexible substrates (softening temperature: ∼ 200 °C).",

author = "A. Ooato and T. Suzuki and Park, {J. H.} and M. Miyao and T. Sadoh",

note = "Funding Information: A part of this work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sport, Science, and Technology in Japan .",

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doi = "10.1016/j.tsf.2013.08.123",

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TY - JOUR

T1 - Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator

AU - Ooato, A.

AU - Suzuki, T.

AU - Park, J. H.

AU - Miyao, M.

AU - Sadoh, T.

N1 - Funding Information: A part of this work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sport, Science, and Technology in Japan .

PY - 2014/4/30

Y1 - 2014/4/30

N2 - Low-temperature formation (∼ 150 °C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as catalyst to enhance the crystallization at low-temperatures. By annealing (150-200 °C) of a-Ge/Sn stacked structures formed on insulators, the composition distributions of Ge/Sn layers are inverted, and Sn/poly-Ge stacked structures are obtained. The results demonstrate that the crystallization occurs at 150 °C, which is slightly below the eutectic temperatures. This Sn-induced crystallization technique is useful to obtain poly-Ge on low-cost flexible substrates (softening temperature: ∼ 200 °C).

AB - Low-temperature formation (∼ 150 °C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as catalyst to enhance the crystallization at low-temperatures. By annealing (150-200 °C) of a-Ge/Sn stacked structures formed on insulators, the composition distributions of Ge/Sn layers are inverted, and Sn/poly-Ge stacked structures are obtained. The results demonstrate that the crystallization occurs at 150 °C, which is slightly below the eutectic temperatures. This Sn-induced crystallization technique is useful to obtain poly-Ge on low-cost flexible substrates (softening temperature: ∼ 200 °C).

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DO - 10.1016/j.tsf.2013.08.123

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VL - 557

SP - 155

EP - 158

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator

Abstract

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