Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator

A. Ooato, T. Suzuki, J. H. Park, M. Miyao, Taizoh Sadoh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Low-temperature formation (∼ 150 °C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as catalyst to enhance the crystallization at low-temperatures. By annealing (150-200 °C) of a-Ge/Sn stacked structures formed on insulators, the composition distributions of Ge/Sn layers are inverted, and Sn/poly-Ge stacked structures are obtained. The results demonstrate that the crystallization occurs at 150 °C, which is slightly below the eutectic temperatures. This Sn-induced crystallization technique is useful to obtain poly-Ge on low-cost flexible substrates (softening temperature: ∼ 200 °C).

Original languageEnglish
Pages (from-to)155-158
Number of pages4
JournalThin Solid Films
Volume557
DOIs
Publication statusPublished - Apr 30 2014

Fingerprint

Crystallization
insulators
crystallization
eutectics
softening
Temperature
Eutectics
catalysts
annealing
temperature
Annealing
Catalysts
Substrates
Chemical analysis
Costs

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator. / Ooato, A.; Suzuki, T.; Park, J. H.; Miyao, M.; Sadoh, Taizoh.

In: Thin Solid Films, Vol. 557, 30.04.2014, p. 155-158.

Research output: Contribution to journalArticle

Ooato, A. ; Suzuki, T. ; Park, J. H. ; Miyao, M. ; Sadoh, Taizoh. / Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator. In: Thin Solid Films. 2014 ; Vol. 557. pp. 155-158.
@article{92f8d2adf5774f1e881571c9809c46f7,
title = "Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator",
abstract = "Low-temperature formation (∼ 150 °C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as catalyst to enhance the crystallization at low-temperatures. By annealing (150-200 °C) of a-Ge/Sn stacked structures formed on insulators, the composition distributions of Ge/Sn layers are inverted, and Sn/poly-Ge stacked structures are obtained. The results demonstrate that the crystallization occurs at 150 °C, which is slightly below the eutectic temperatures. This Sn-induced crystallization technique is useful to obtain poly-Ge on low-cost flexible substrates (softening temperature: ∼ 200 °C).",
author = "A. Ooato and T. Suzuki and Park, {J. H.} and M. Miyao and Taizoh Sadoh",
year = "2014",
month = "4",
day = "30",
doi = "10.1016/j.tsf.2013.08.123",
language = "English",
volume = "557",
pages = "155--158",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator

AU - Ooato, A.

AU - Suzuki, T.

AU - Park, J. H.

AU - Miyao, M.

AU - Sadoh, Taizoh

PY - 2014/4/30

Y1 - 2014/4/30

N2 - Low-temperature formation (∼ 150 °C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as catalyst to enhance the crystallization at low-temperatures. By annealing (150-200 °C) of a-Ge/Sn stacked structures formed on insulators, the composition distributions of Ge/Sn layers are inverted, and Sn/poly-Ge stacked structures are obtained. The results demonstrate that the crystallization occurs at 150 °C, which is slightly below the eutectic temperatures. This Sn-induced crystallization technique is useful to obtain poly-Ge on low-cost flexible substrates (softening temperature: ∼ 200 °C).

AB - Low-temperature formation (∼ 150 °C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as catalyst to enhance the crystallization at low-temperatures. By annealing (150-200 °C) of a-Ge/Sn stacked structures formed on insulators, the composition distributions of Ge/Sn layers are inverted, and Sn/poly-Ge stacked structures are obtained. The results demonstrate that the crystallization occurs at 150 °C, which is slightly below the eutectic temperatures. This Sn-induced crystallization technique is useful to obtain poly-Ge on low-cost flexible substrates (softening temperature: ∼ 200 °C).

UR - http://www.scopus.com/inward/record.url?scp=84897916231&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84897916231&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2013.08.123

DO - 10.1016/j.tsf.2013.08.123

M3 - Article

VL - 557

SP - 155

EP - 158

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -