Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator

A. Ooato, T. Suzuki, J. H. Park, M. Miyao, T. Sadoh

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Abstract

Low-temperature formation (∼ 150 °C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as catalyst to enhance the crystallization at low-temperatures. By annealing (150-200 °C) of a-Ge/Sn stacked structures formed on insulators, the composition distributions of Ge/Sn layers are inverted, and Sn/poly-Ge stacked structures are obtained. The results demonstrate that the crystallization occurs at 150 °C, which is slightly below the eutectic temperatures. This Sn-induced crystallization technique is useful to obtain poly-Ge on low-cost flexible substrates (softening temperature: ∼ 200 °C).

Original languageEnglish
Pages (from-to)155-158
Number of pages4
JournalThin Solid Films
Volume557
DOIs
Publication statusPublished - Apr 30 2014

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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