SOI-MOSFET/diode composite photodetection device

Y. Uryu, Tanemasa Asano

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A new photodetection device, which is composed of a silicon-on-insulator metal-oxide-semiconductor field-effect-transistor (SOI MOSFET) and a pn junction diode, is proposed and the operation is experimentally studied. The photodiode is connected to the body of the SOI MOSFET. Carriers photo generated in the photodiode flow to the body and induce the bipolar action of the SOI MOSFET. As a result, the diode photocurrent is amplified by the SOI MOSFET. This operation is demonstrated by the fabrication of n-channel SOI MOSFET/pn+ photodiode and p-channel SOI MOSFET/n+p photodiode composite devices. Enhancement in current amplification by an electrically floating gate is demonstrated. A rather pronounced current amplification is observed for the n-channel/pn+ device. Shrinkage of gate length results in an increase in the current amplification factor. Current amplification up to about 100 is observed by shrinking the gate length to 0.8 μm.

Original languageEnglish
Pages (from-to)2897-2902
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number4 B
Publication statusPublished - Apr 1 2001

Fingerprint

SOI (semiconductors)
MOSFET devices
metal oxide semiconductors
Diodes
field effect transistors
diodes
insulators
Photodiodes
Silicon
photodiodes
composite materials
Amplification
Composite materials
silicon
junction diodes
Photocurrents
shrinkage
floating
photocurrents
Fabrication

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

SOI-MOSFET/diode composite photodetection device. / Uryu, Y.; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 4 B, 01.04.2001, p. 2897-2902.

Research output: Contribution to journalArticle

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