Abstract
Solution-based fabrication of a high-quality metal oxide nano-film (∼10-nm thickness) by the surface sol-gel process and postannealing is reported. Hafnium(IV) n-butoxide in toluene-ethanol was chemisorbed onto hydroxylated Si wafer to give a uniform gel layer, of which alkoxide group was then hydrolyzed and subjected to a second cycle of chemisorption/hydrolysis. Annealing of a 10-cycle film at 500 °C produced uniform, void-free HfO 2 layer of 5.7-nm thickness. Its electrical properties, dielectric constant, leakage current, and dielectric breakdown were comparable to the HfO2 film as prepared by the conventional vapor deposition method. On the other hand, a similar HfO2 nano-film prepared by spin-coating provided a less homogeneous layer in a high-resolution TEM image. The electrical properties of the latter film were much inferior to those of the surface sol-gel film. We concluded that the solution-based method is suitable for fabrication of dielectric nanofilms of metal oxide.
Original language | English |
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Pages (from-to) | 450-458 |
Number of pages | 9 |
Journal | Chemistry of Materials |
Volume | 17 |
Issue number | 2 |
DOIs | |
Publication status | Published - Jan 25 2005 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Chemical Engineering(all)
- Materials Chemistry