Abstract
Solution-based fabrication of a high-quality metal oxide nano-film (∼10-nm thickness) by the surface sol-gel process and postannealing is reported. Hafnium(IV) n-butoxide in toluene-ethanol was chemisorbed onto hydroxylated Si wafer to give a uniform gel layer, of which alkoxide group was then hydrolyzed and subjected to a second cycle of chemisorption/hydrolysis. Annealing of a 10-cycle film at 500 °C produced uniform, void-free HfO 2 layer of 5.7-nm thickness. Its electrical properties, dielectric constant, leakage current, and dielectric breakdown were comparable to the HfO2 film as prepared by the conventional vapor deposition method. On the other hand, a similar HfO2 nano-film prepared by spin-coating provided a less homogeneous layer in a high-resolution TEM image. The electrical properties of the latter film were much inferior to those of the surface sol-gel film. We concluded that the solution-based method is suitable for fabrication of dielectric nanofilms of metal oxide.
| Original language | English |
|---|---|
| Pages (from-to) | 450-458 |
| Number of pages | 9 |
| Journal | Chemistry of Materials |
| Volume | 17 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Jan 25 2005 |
| Externally published | Yes |
Fingerprint
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Chemical Engineering(all)
- Materials Chemistry
Cite this
Sol-gel fabrication of dielectric HfO2 nano-films; formation of uniform, void-free layers and their superior electrical properties. / Aoki, Yoshitaka; Kunitake, Toyoki; Nakao, Aiko.
In: Chemistry of Materials, Vol. 17, No. 2, 25.01.2005, p. 450-458.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Sol-gel fabrication of dielectric HfO2 nano-films; formation of uniform, void-free layers and their superior electrical properties
AU - Aoki, Yoshitaka
AU - Kunitake, Toyoki
AU - Nakao, Aiko
PY - 2005/1/25
Y1 - 2005/1/25
N2 - Solution-based fabrication of a high-quality metal oxide nano-film (∼10-nm thickness) by the surface sol-gel process and postannealing is reported. Hafnium(IV) n-butoxide in toluene-ethanol was chemisorbed onto hydroxylated Si wafer to give a uniform gel layer, of which alkoxide group was then hydrolyzed and subjected to a second cycle of chemisorption/hydrolysis. Annealing of a 10-cycle film at 500 °C produced uniform, void-free HfO 2 layer of 5.7-nm thickness. Its electrical properties, dielectric constant, leakage current, and dielectric breakdown were comparable to the HfO2 film as prepared by the conventional vapor deposition method. On the other hand, a similar HfO2 nano-film prepared by spin-coating provided a less homogeneous layer in a high-resolution TEM image. The electrical properties of the latter film were much inferior to those of the surface sol-gel film. We concluded that the solution-based method is suitable for fabrication of dielectric nanofilms of metal oxide.
AB - Solution-based fabrication of a high-quality metal oxide nano-film (∼10-nm thickness) by the surface sol-gel process and postannealing is reported. Hafnium(IV) n-butoxide in toluene-ethanol was chemisorbed onto hydroxylated Si wafer to give a uniform gel layer, of which alkoxide group was then hydrolyzed and subjected to a second cycle of chemisorption/hydrolysis. Annealing of a 10-cycle film at 500 °C produced uniform, void-free HfO 2 layer of 5.7-nm thickness. Its electrical properties, dielectric constant, leakage current, and dielectric breakdown were comparable to the HfO2 film as prepared by the conventional vapor deposition method. On the other hand, a similar HfO2 nano-film prepared by spin-coating provided a less homogeneous layer in a high-resolution TEM image. The electrical properties of the latter film were much inferior to those of the surface sol-gel film. We concluded that the solution-based method is suitable for fabrication of dielectric nanofilms of metal oxide.
UR - http://www.scopus.com/inward/record.url?scp=12344261411&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=12344261411&partnerID=8YFLogxK
U2 - 10.1021/cm048971r
DO - 10.1021/cm048971r
M3 - Article
AN - SCOPUS:12344261411
VL - 17
SP - 450
EP - 458
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 2
ER -