Solid-phase crystallization of high-quality Si films on SiO2 by local Ge-insertion

I. Tsunoda, K. Nagatomo, A. Kenjo, Taizoh Sadoh, M. Miyao

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Effects of local Ge-insertion in a-Si films on solid-phase crystallization (SPC) were investigated. Three types of stacked structures, i.e. (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2 and (c) SiO 2/a-Ge/a-Si/SiO2 were fabricated and annealed at 600 °C. The results for the structure (a) showed that Ge atoms diffused into the Si layers, and no-enhanced SPC was detected. On the other hand, the results for the structures (b) and (c) indicated that Ge atoms were localized in the initial position. In addition, significant enhancement of SPC of a-Si was found. These results indicated that crystal nucleation was initiated at Ge layers directly contacted to SiO2, and then propagated into a-Si layer. Consequently, interface nucleation driven SPC becomes possible by using the structures (b) and (c). This will be a useful tool to achieve growth of Si crystals with a preferential orientation on SiO2.

Original languageEnglish
Pages (from-to)489-492
Number of pages4
JournalThin Solid Films
Volume451-452
DOIs
Publication statusPublished - Mar 22 2004
EventProceedings of Symposium D on Thin Film and Nano-Structured - Strasbourg, France
Duration: Jun 10 2003Jun 13 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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