TY - JOUR
T1 - Solid-phase crystallization of high-quality Si films on SiO2 by local Ge-insertion
AU - Tsunoda, I.
AU - Nagatomo, K.
AU - Kenjo, A.
AU - Sadoh, T.
AU - Miyao, M.
N1 - Funding Information:
We are very grateful to Dr S. Yamaguchi of the Central Research Laboratory, Hitachi Ltd, for his stimulating discussions. A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Science and Technology of Japan.
PY - 2004/3/22
Y1 - 2004/3/22
N2 - Effects of local Ge-insertion in a-Si films on solid-phase crystallization (SPC) were investigated. Three types of stacked structures, i.e. (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2 and (c) SiO 2/a-Ge/a-Si/SiO2 were fabricated and annealed at 600 °C. The results for the structure (a) showed that Ge atoms diffused into the Si layers, and no-enhanced SPC was detected. On the other hand, the results for the structures (b) and (c) indicated that Ge atoms were localized in the initial position. In addition, significant enhancement of SPC of a-Si was found. These results indicated that crystal nucleation was initiated at Ge layers directly contacted to SiO2, and then propagated into a-Si layer. Consequently, interface nucleation driven SPC becomes possible by using the structures (b) and (c). This will be a useful tool to achieve growth of Si crystals with a preferential orientation on SiO2.
AB - Effects of local Ge-insertion in a-Si films on solid-phase crystallization (SPC) were investigated. Three types of stacked structures, i.e. (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2 and (c) SiO 2/a-Ge/a-Si/SiO2 were fabricated and annealed at 600 °C. The results for the structure (a) showed that Ge atoms diffused into the Si layers, and no-enhanced SPC was detected. On the other hand, the results for the structures (b) and (c) indicated that Ge atoms were localized in the initial position. In addition, significant enhancement of SPC of a-Si was found. These results indicated that crystal nucleation was initiated at Ge layers directly contacted to SiO2, and then propagated into a-Si layer. Consequently, interface nucleation driven SPC becomes possible by using the structures (b) and (c). This will be a useful tool to achieve growth of Si crystals with a preferential orientation on SiO2.
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U2 - 10.1016/j.tsf.2003.11.011
DO - 10.1016/j.tsf.2003.11.011
M3 - Conference article
AN - SCOPUS:17644429464
SN - 0040-6090
VL - 451-452
SP - 489
EP - 492
JO - Thin Solid Films
JF - Thin Solid Films
T2 - Proceedings of Symposium D on Thin Film and Nano-Structured
Y2 - 10 June 2003 through 13 June 2003
ER -