Abstract
Orientation dependent solid-phase growth of β-FeSi2 thin films on (100), (110), and (111) Si substrates has been investigated by using a-Fe(thickness: 20 nm)/c-Si stacked structures. XRD measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi2 was as follows: (100) > (111) > (110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi2 and Si substrates, i.e., the lattice mismatch between β-FeSi2 (100) and Si (100), β-FeSi2 (110) or (101) and Si (111), and β-FeSi2 (010) or (001) and Si (110) are 1.4-2.0%, 5.3-5.5%, and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.
Original language | English |
---|---|
Pages (from-to) | 155-158 |
Number of pages | 4 |
Journal | Research Reports on Information Science and Electrical Engineering of Kyushu University |
Volume | 8 |
Issue number | 2 |
Publication status | Published - Sep 1 2003 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Electrical and Electronic Engineering