Solid-phase growth of β-FeSi2 on Si substrates with different crystal orientations

Yuji Murakami; Yutaka Yoshikado; Atsushi Kenjo; Tsuyoshi Yoshitake; Taizoh Sadoh

Solid-phase growth of β-FeSi₂ on Si substrates with different crystal orientations

Yuji Murakami, Yutaka Yoshikado, Atsushi Kenjo, Tsuyoshi Yoshitake, Taizoh Sadoh

Research output: Contribution to journal › Article › peer-review

Abstract

Orientation dependent solid-phase growth of β-FeSi₂ thin films on (100), (110), and (111) Si substrates has been investigated by using a-Fe(thickness: 20 nm)/c-Si stacked structures. XRD measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi₂ was as follows: (100) > (111) > (110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi₂ and Si substrates, i.e., the lattice mismatch between β-FeSi₂ (100) and Si (100), β-FeSi₂ (110) or (101) and Si (111), and β-FeSi₂ (010) or (001) and Si (110) are 1.4-2.0%, 5.3-5.5%, and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.

Original language	English
Pages (from-to)	155-158
Number of pages	4
Journal	Research Reports on Information Science and Electrical Engineering of Kyushu University
Volume	8
Issue number	2
Publication status	Published - Sep 1 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Computer Science(all)
Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Solid-phase growth of β-FeSi<sub>2</sub> on Si substrates with different crystal orientations'. Together they form a unique fingerprint.

Cite this

Solid-phase growth of β-FeSi₂ on Si substrates with different crystal orientations. / Murakami, Yuji; Yoshikado, Yutaka; Kenjo, Atsushi; Yoshitake, Tsuyoshi ; Sadoh, Taizoh.

In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 8, No. 2, 01.09.2003, p. 155-158.

Research output: Contribution to journal › Article › peer-review

@article{4ba5b371ffe04aaaa0ea3626e765b887,

title = "Solid-phase growth of β-FeSi2 on Si substrates with different crystal orientations",

abstract = "Orientation dependent solid-phase growth of β-FeSi2 thin films on (100), (110), and (111) Si substrates has been investigated by using a-Fe(thickness: 20 nm)/c-Si stacked structures. XRD measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi2 was as follows: (100) > (111) > (110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi2 and Si substrates, i.e., the lattice mismatch between β-FeSi2 (100) and Si (100), β-FeSi2 (110) or (101) and Si (111), and β-FeSi2 (010) or (001) and Si (110) are 1.4-2.0%, 5.3-5.5%, and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.",

author = "Yuji Murakami and Yutaka Yoshikado and Atsushi Kenjo and Tsuyoshi Yoshitake and Taizoh Sadoh",

year = "2003",

month = sep,

day = "1",

language = "English",

volume = "8",

pages = "155--158",

journal = "Research Reports on Information Science and Electrical Engineering of Kyushu University",

issn = "1342-3819",

publisher = "Kyushu University, Faculty of Science",

number = "2",

}

TY - JOUR

T1 - Solid-phase growth of β-FeSi2 on Si substrates with different crystal orientations

AU - Murakami, Yuji

AU - Yoshikado, Yutaka

AU - Kenjo, Atsushi

AU - Yoshitake, Tsuyoshi

AU - Sadoh, Taizoh

PY - 2003/9/1

Y1 - 2003/9/1

N2 - Orientation dependent solid-phase growth of β-FeSi2 thin films on (100), (110), and (111) Si substrates has been investigated by using a-Fe(thickness: 20 nm)/c-Si stacked structures. XRD measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi2 was as follows: (100) > (111) > (110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi2 and Si substrates, i.e., the lattice mismatch between β-FeSi2 (100) and Si (100), β-FeSi2 (110) or (101) and Si (111), and β-FeSi2 (010) or (001) and Si (110) are 1.4-2.0%, 5.3-5.5%, and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.

AB - Orientation dependent solid-phase growth of β-FeSi2 thin films on (100), (110), and (111) Si substrates has been investigated by using a-Fe(thickness: 20 nm)/c-Si stacked structures. XRD measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi2 was as follows: (100) > (111) > (110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi2 and Si substrates, i.e., the lattice mismatch between β-FeSi2 (100) and Si (100), β-FeSi2 (110) or (101) and Si (111), and β-FeSi2 (010) or (001) and Si (110) are 1.4-2.0%, 5.3-5.5%, and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.

UR - http://www.scopus.com/inward/record.url?scp=0347655648&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347655648&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0347655648

VL - 8

SP - 155

EP - 158

JO - Research Reports on Information Science and Electrical Engineering of Kyushu University

JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

SN - 1342-3819

IS - 2

ER -

Solid-phase growth of β-FeSi2 on Si substrates with different crystal orientations

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Cite this

Solid-phase growth of β-FeSi₂ on Si substrates with different crystal orientations