Abstract
Orientation dependent solid-phase growth of β-FeSi2 thin films on (100), (110), and (111) Si substrates has been investigated by using a-Fe(thickness: 20 nm)/c-Si stacked structures. XRD measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi2 was as follows: (100) > (111) > (110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi2 and Si substrates, i.e., the lattice mismatch between β-FeSi2 (100) and Si (100), β-FeSi2 (110) or (101) and Si (111), and β-FeSi2 (010) or (001) and Si (110) are 1.4-2.0%, 5.3-5.5%, and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.
| Original language | English |
|---|---|
| Pages (from-to) | 155-158 |
| Number of pages | 4 |
| Journal | Research Reports on Information Science and Electrical Engineering of Kyushu University |
| Volume | 8 |
| Issue number | 2 |
| Publication status | Published - Sep 1 2003 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Electrical and Electronic Engineering
Cite this
Murakami, Y., Yoshikado, Y., Kenjo, A., Yoshitake, T., & Sadoh, T. (2003). Solid-phase growth of β-FeSi2 on Si substrates with different crystal orientations. Research Reports on Information Science and Electrical Engineering of Kyushu University, 8(2), 155-158.