Solid-phase growth of β-FeSi2 on Si substrates with different crystal orientations

Yuji Murakami, Yutaka Yoshikado, Atsushi Kenjo, Tsuyoshi Yoshitake, Taizoh Sadoh

Research output: Contribution to journalArticlepeer-review


Orientation dependent solid-phase growth of β-FeSi2 thin films on (100), (110), and (111) Si substrates has been investigated by using a-Fe(thickness: 20 nm)/c-Si stacked structures. XRD measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi2 was as follows: (100) > (111) > (110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi2 and Si substrates, i.e., the lattice mismatch between β-FeSi2 (100) and Si (100), β-FeSi2 (110) or (101) and Si (111), and β-FeSi2 (010) or (001) and Si (110) are 1.4-2.0%, 5.3-5.5%, and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.

Original languageEnglish
Pages (from-to)155-158
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Issue number2
Publication statusPublished - Sep 1 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

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