TY - JOUR
T1 - Solid solutions of AIN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy
AU - Kern, R. S.
AU - Tanaka, S.
AU - Davis, R. F.
N1 - Funding Information:
The authors acknowledge The Office of Naval Research for the sponsorship of this research under Contract No. N00014-88-K-0341, Cree Research, Inc. for the vicinal 6H-SiC substrates, Applied Science and Technology, Inc. for the ECR plasma source, R. L. Moore at Evans East for the AES analysis, and J. Bentley of Oak Ridge National Laboratories for helpful discussions. This research was also partially sponsored by the Division of Materials Sciences, United States Department of Energy, under contract DE-AC05-84OR21400 with Martin Marietta Energy Systems, Inc., and through the SHaRE Program under contract DE-AC05-76OR00033 with Oak Ridge Associated Universities.
PY - 1993/7
Y1 - 1993/7
N2 - Solid solutions of aluminum nitride (AIN) and silicon carbide (SiC), the only intermediate phases in their respective binary systems, have been grown at 1050 °C on a(6H)-SiC(0001) substrates cut 3-4° off-axis toward [1120] using plasma-assisted, gas-source molecular beam epitaxy. A film having the approximate composition of (AlN)0.3(SiC)0.7 as determined by Auger spectrometry, was selected for additional study and is the focus of this note. High resolution transmission electron microscopy (HRTEM) revealed that the film was monocrystalline with the wurtzite (2H) crystal structure.
AB - Solid solutions of aluminum nitride (AIN) and silicon carbide (SiC), the only intermediate phases in their respective binary systems, have been grown at 1050 °C on a(6H)-SiC(0001) substrates cut 3-4° off-axis toward [1120] using plasma-assisted, gas-source molecular beam epitaxy. A film having the approximate composition of (AlN)0.3(SiC)0.7 as determined by Auger spectrometry, was selected for additional study and is the focus of this note. High resolution transmission electron microscopy (HRTEM) revealed that the film was monocrystalline with the wurtzite (2H) crystal structure.
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U2 - 10.1557/JMR.1993.1477
DO - 10.1557/JMR.1993.1477
M3 - Article
AN - SCOPUS:0027625302
SN - 0884-2914
VL - 8
SP - 1477
EP - 1480
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 7
ER -