Solid solutions of AIN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy

R. S. Kern, Tanaka Satoru, R. F. Davis

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Solid solutions of aluminum nitride (AIN) and silicon carbide (SiC), the only intermediate phases in their respective binary systems, have been grown at 1050 °C on a(6H)-SiC(0001) substrates cut 3-4° off-axis toward [1120] using plasma-assisted, gas-source molecular beam epitaxy. A film having the approximate composition of (AlN)0.3(SiC)0.7 as determined by Auger spectrometry, was selected for additional study and is the focus of this note. High resolution transmission electron microscopy (HRTEM) revealed that the film was monocrystalline with the wurtzite (2H) crystal structure.

Original languageEnglish
Pages (from-to)1477-1480
Number of pages4
JournalJournal of Materials Research
Volume8
Issue number7
DOIs
Publication statusPublished - Jan 1 1993

Fingerprint

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide
silicon carbides
Solid solutions
solid solutions
molecular beam epitaxy
Plasmas
gases
High resolution transmission electron microscopy
wurtzite
Spectrometry
Crystal structure
transmission electron microscopy
crystal structure
high resolution
Substrates
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Solid solutions of AIN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy. / Kern, R. S.; Satoru, Tanaka; Davis, R. F.

In: Journal of Materials Research, Vol. 8, No. 7, 01.01.1993, p. 1477-1480.

Research output: Contribution to journalArticle

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