Solidification conditions at the early stages for grain control of polycrystalline silicon ingot

Hirofumi Miyahara, Takafumi Nakashima, Kozo Wakasugi, Seiko Nara, Keisaku Ogi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The influence of the shape of the crucible base and the solidification condition at an initial stage of unidirectional solidification on the microstructure of the polycrystalline silicon has been investigated. At the slow solidification velocity less than 10 ×10-6m/s, the thin columnar grains grew. However, in above the velocity around 40 ×10 -6m/s, the large grains grew at the base of the crucible. The crystal orientation of 〈211〉 or 〈101〉 was detected at the parallel to the surface of the crucible. Undercooling, anisotropy of growth direction and the twin reentrant corner might cause the priority solidification direction. However, the equiaxed structure was appeared and grains became to be fine at the middle of the crucible. Therefore, the double solidification velocity technique was used. There might be a maximum speed around 10 ×10-6 m/s at the early stage to maintain the large grain size.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Pages1223-1226
Number of pages4
Volume1
DOIs
Publication statusPublished - 2007
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: May 7 2006May 12 2006

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period5/7/065/12/06

Fingerprint

Ingots
Polysilicon
Crucibles
Solidification
Undercooling
Crystal orientation
Anisotropy
Microstructure
Direction compound

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Miyahara, H., Nakashima, T., Wakasugi, K., Nara, S., & Ogi, K. (2007). Solidification conditions at the early stages for grain control of polycrystalline silicon ingot. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (Vol. 1, pp. 1223-1226). [4059857] https://doi.org/10.1109/WCPEC.2006.279402

Solidification conditions at the early stages for grain control of polycrystalline silicon ingot. / Miyahara, Hirofumi; Nakashima, Takafumi; Wakasugi, Kozo; Nara, Seiko; Ogi, Keisaku.

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. Vol. 1 2007. p. 1223-1226 4059857.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Miyahara, H, Nakashima, T, Wakasugi, K, Nara, S & Ogi, K 2007, Solidification conditions at the early stages for grain control of polycrystalline silicon ingot. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. vol. 1, 4059857, pp. 1223-1226, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 5/7/06. https://doi.org/10.1109/WCPEC.2006.279402
Miyahara H, Nakashima T, Wakasugi K, Nara S, Ogi K. Solidification conditions at the early stages for grain control of polycrystalline silicon ingot. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. Vol. 1. 2007. p. 1223-1226. 4059857 https://doi.org/10.1109/WCPEC.2006.279402
Miyahara, Hirofumi ; Nakashima, Takafumi ; Wakasugi, Kozo ; Nara, Seiko ; Ogi, Keisaku. / Solidification conditions at the early stages for grain control of polycrystalline silicon ingot. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. Vol. 1 2007. pp. 1223-1226
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