Solubility and diffusion coefficient of electrically active titanium in silicon

Shigehiro Kuge, Hiroshi Nakashima

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    17 Citations (Scopus)

    Abstract

    The deep impurity levels and the solubility of titanium in silicon have been investigated by deep level transient spectroscopy (DLTS). It is found that titanium forms multilevels with an acceptor level of Ec — 0.09 V, a donor level of Ec — 0.21 eV and a double-donor level of EV + 0.28 eV. The solubilities as a function of reciprocal absolute temperature show a good straight line with the activation energy of 3.8 eV. The diffusion coefficient is determined in the high temperature range 1050-1150°C and in the lower range 600-800°C. The diffusion coefficient is represented by DTi= 1.2 x 10-1exp (-2.05/kT) cm2 s-1.

    Original languageEnglish
    Pages (from-to)2659-2663
    Number of pages5
    JournalJapanese Journal of Applied Physics
    Volume30
    Issue number11R
    DOIs
    Publication statusPublished - Nov 1991

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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