Solution-based fabrication of high-κ gate dielectrics for next-generation metal-oxide semiconductor transistors

Yoshitaka Aoki, Toyoki Kunitake

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

An alternative solution-based approach to fabricate high-κ metal oxide ultrathin films via a surface sol-gel process was established. Using this approach, ultrathin films were fabricated from conventional dielectric materials MO2 (M=Ti, Zr) as well as from binary oxide composites MO2-M′On (M′=Ta, La). These ultrathin films showed dielectric properties comparable to those obtained by vapor-deposition methods.

Original languageEnglish
Pages (from-to)118-123
Number of pages6
JournalAdvanced Materials
Volume16
Issue number2
DOIs
Publication statusPublished - Jan 16 2004
Externally publishedYes

Fingerprint

Ultrathin films
Gate dielectrics
Transistors
Metals
Fabrication
Vapor deposition
Dielectric properties
Oxides
Sol-gel process
Oxide films
Composite materials
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Solution-based fabrication of high-κ gate dielectrics for next-generation metal-oxide semiconductor transistors. / Aoki, Yoshitaka; Kunitake, Toyoki.

In: Advanced Materials, Vol. 16, No. 2, 16.01.2004, p. 118-123.

Research output: Contribution to journalArticle

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