Solution-based fabrication of high-κ gate dielectrics for next-generation metal-oxide semiconductor transistors

Yoshitaka Aoki, Toyoki Kunitake

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

An alternative solution-based approach to fabricate high-κ metal oxide ultrathin films via a surface sol-gel process was established. Using this approach, ultrathin films were fabricated from conventional dielectric materials MO2 (M=Ti, Zr) as well as from binary oxide composites MO2-M′On (M′=Ta, La). These ultrathin films showed dielectric properties comparable to those obtained by vapor-deposition methods.

Original languageEnglish
Pages (from-to)118-123
Number of pages6
JournalAdvanced Materials
Volume16
Issue number2
DOIs
Publication statusPublished - Jan 16 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Solution-based fabrication of high-κ gate dielectrics for next-generation metal-oxide semiconductor transistors'. Together they form a unique fingerprint.

  • Cite this