Solution-based fabrication of high-k gate dielectrics

Y. Aoki, T. Kunitake

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we conducted fabrication of ultrathin films from conventional dielectric materials MOx (M=Ti, Zr) as well as from binary oxide composites MOx-MOy (M=Ta, La).

Original languageEnglish
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages40-41
Number of pages2
ISBN (Electronic)4891140372, 9784891140373
DOIs
Publication statusPublished - Jan 1 2003
EventInternational Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan
Duration: Nov 6 2003Nov 7 2003

Publication series

NameExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Other

OtherInternational Workshop on Gate Insulator, IWGI 2003
CountryJapan
CityTokyo
Period11/6/0311/7/03

Fingerprint

Ultrathin films
Gate dielectrics
Oxides
Fabrication
Composite materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Aoki, Y., & Kunitake, T. (2003). Solution-based fabrication of high-k gate dielectrics. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 (pp. 40-41). [1252504] (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2003.159179

Solution-based fabrication of high-k gate dielectrics. / Aoki, Y.; Kunitake, T.

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 40-41 1252504 (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Aoki, Y & Kunitake, T 2003, Solution-based fabrication of high-k gate dielectrics. in Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003., 1252504, Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003, Institute of Electrical and Electronics Engineers Inc., pp. 40-41, International Workshop on Gate Insulator, IWGI 2003, Tokyo, Japan, 11/6/03. https://doi.org/10.1109/IWGI.2003.159179
Aoki Y, Kunitake T. Solution-based fabrication of high-k gate dielectrics. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 40-41. 1252504. (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003). https://doi.org/10.1109/IWGI.2003.159179
Aoki, Y. ; Kunitake, T. / Solution-based fabrication of high-k gate dielectrics. Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 40-41 (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003).
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