Solution-based fabrication of high-k gate dielectrics

Y. Aoki, T. Kunitake

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we conducted fabrication of ultrathin films from conventional dielectric materials MOx (M=Ti, Zr) as well as from binary oxide composites MOx-MOy (M=Ta, La).

Original languageEnglish
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages40-41
Number of pages2
ISBN (Electronic)4891140372, 9784891140373
DOIs
Publication statusPublished - Jan 1 2003
Externally publishedYes
EventInternational Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan
Duration: Nov 6 2003Nov 7 2003

Publication series

NameExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Other

OtherInternational Workshop on Gate Insulator, IWGI 2003
CountryJapan
CityTokyo
Period11/6/0311/7/03

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Aoki, Y., & Kunitake, T. (2003). Solution-based fabrication of high-k gate dielectrics. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 (pp. 40-41). [1252504] (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2003.159179