Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors

Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Ikenoue, Yukiharu Uraoka

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The formation of perhydropolysilazane (PHPS)-based SiO2 films by CO2 laser annealing is proposed. Irradiation with a CO2 laser with optimum fluence transformed a prebaked PHPS film into a SiO2 film with uniform composition in the thickness direction. Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a SiO2 film as the gate insulator were fabricated. When the SiO2 film was formed by CO2 laser annealing (CO2LA) at the optimum fluence of 20mJ/cm2, the film had fewer OH groups which was one-twentieth that of the furnace annealed PHPS film and onehundredth that of the SiO2 film deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethyl orthosilicate (TEOS). The resulting TFTs using PHPS showed a clear transistor operation with a field-effect mobility of 37.9 ± 1.2cm2V-1 s-1, a threshold voltage of 9.8 ± 0.2 V, and a subthreshold swing of 0.76 ± 0.02V/decade. The characteristics of such TFTs were as good as those of a poly-Si TFT with a SiO2 gate insulator prepared by PECVD using TEOS.

Original languageEnglish
Article number056503
JournalJapanese Journal of Applied Physics
Volume56
Issue number5
DOIs
Publication statusPublished - May 1 2017

Fingerprint

laser annealing
Thin film transistors
Polysilicon
transistors
insulators
Annealing
Lasers
silicon
thin films
tetraethyl orthosilicate
Plasma enhanced chemical vapor deposition
fluence
vapor deposition
Threshold voltage
threshold voltage
furnaces
Transistors
Furnaces
Irradiation
irradiation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors. / Hishitani, Daisuke; Horita, Masahiro; Ishikawa, Yasuaki; Ikenoue, Hiroshi; Uraoka, Yukiharu.

In: Japanese Journal of Applied Physics, Vol. 56, No. 5, 056503, 01.05.2017.

Research output: Contribution to journalArticle

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