Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors

Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Ikenoue, Yukiharu Uraoka

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The formation of perhydropolysilazane (PHPS)-based SiO2 films by CO2 laser annealing is proposed. Irradiation with a CO2 laser with optimum fluence transformed a prebaked PHPS film into a SiO2 film with uniform composition in the thickness direction. Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a SiO2 film as the gate insulator were fabricated. When the SiO2 film was formed by CO2 laser annealing (CO2LA) at the optimum fluence of 20mJ/cm2, the film had fewer OH groups which was one-twentieth that of the furnace annealed PHPS film and onehundredth that of the SiO2 film deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethyl orthosilicate (TEOS). The resulting TFTs using PHPS showed a clear transistor operation with a field-effect mobility of 37.9 ± 1.2cm2V-1 s-1, a threshold voltage of 9.8 ± 0.2 V, and a subthreshold swing of 0.76 ± 0.02V/decade. The characteristics of such TFTs were as good as those of a poly-Si TFT with a SiO2 gate insulator prepared by PECVD using TEOS.

Original languageEnglish
Article number056503
JournalJapanese journal of applied physics
Volume56
Issue number5
DOIs
Publication statusPublished - May 2017

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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