Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics

Frédéric Mercier, Shin Ichi Nishizawa

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We studied numerically the fluid dynamics of the silicon melt in the high temperature solution growth of silicon carbide (SiC) with the presence of alternative magnetic fields. A 2D-axisymmetric model for 2 in SiC crystal growth was used for this study. The results revealed that the melt convection is strongly affected by the coil position and the applied frequency. Results on the effect of electromagnetic convection in the presence of buoyancy convection are also given in this paper.

Original languageEnglish
Pages (from-to)385-388
Number of pages4
JournalJournal of Crystal Growth
Volume318
Issue number1
DOIs
Publication statusPublished - Mar 1 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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