Solution processed high performance pentacene thin-film transistors

Ting Han Chao, Ming Jen Chang, Motonori Watanabe, Ming Hui Luo, Yuan Jay Chang, Tzu Chien Fang, Kew Yu Chen, Tahsin J. Chow

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm2 V–1 s–1 with an on/off ratio of 106.

Original languageEnglish
Pages (from-to)6148-6150
Number of pages3
JournalChemical Communications
Volume48
Issue number49
DOIs
Publication statusPublished - May 23 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • Cite this

    Chao, T. H., Chang, M. J., Watanabe, M., Luo, M. H., Chang, Y. J., Fang, T. C., Chen, K. Y., & Chow, T. J. (2012). Solution processed high performance pentacene thin-film transistors. Chemical Communications, 48(49), 6148-6150. https://doi.org/10.1039/c2cc31754k