Solvation effects on collisional processes of size-selected I-2(CO2)n cluster ions with silicon surface

Hisato Yasumatsu, Tatsuya Tsukuda, Toshiki Sugai, Akira Terasaki, Takashi Nagata, Tamotsu Kondow

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Collisional processes of I-2 (CO2)n with a silicon surface were investigated. Size-selected I-2 (CO2)n (n = 0-30) were allowed to collide with a silicon surface at collision energies per I-2 of 1-150 eV at almost normal incidence angles. All the anions scattered from the surface were I-, I-(CO2), I-(CO2)2, I-2, I-2(CO2), and I-0(CO2)2. The molecular dynamics simulation revealed that the dissociation of I-2 occurs through vibrational and rotational excitation. The I-2 dissociation was found to be either retarded or accelerated by the presence of the solvent CO2 molecules. The solvation effects on the dissociation of I-2 were explained in terms of energy transfer between I-2 and CO2 solvent molecules and a complex formed on the surface at the moment of the collision.

Original languageEnglish
Pages (from-to)901-904
Number of pages4
JournalSurface Review and Letters
Issue number1
Publication statusPublished - Feb 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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