Collisional processes of I-2 (CO2)n with a silicon surface were investigated. Size-selected I-2 (CO2)n (n = 0-30) were allowed to collide with a silicon surface at collision energies per I-2 of 1-150 eV at almost normal incidence angles. All the anions scattered from the surface were I-, I-(CO2), I-(CO2)2, I-2, I-2(CO2), and I-0(CO2)2. The molecular dynamics simulation revealed that the dissociation of I-2 occurs through vibrational and rotational excitation. The I-2 dissociation was found to be either retarded or accelerated by the presence of the solvent CO2 molecules. The solvation effects on the dissociation of I-2 were explained in terms of energy transfer between I-2 and CO2 solvent molecules and a complex formed on the surface at the moment of the collision.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry