Soot Bonding Process and its Application to Si Dielectric Isolation

Renshi Sawada, J. Watanabe, H. Nakada, K. Koyabu

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

A dielectric isolated substrate produced by bonding two silicon substrates with Si—B—O soot particles generated by a flame hydrolysis reaction is introduced. There are three steps in the production process: spraying Si—B—O soot on a flat or a grooved silicon substrate, positioning a support substrate, and sintering. The grooves can be filled and the two substrates bonded at the same time and without voids. Experimentally fabricated large scale integrated circuits have good performance characteristics, over the whole substrate. This method can produce a 6 in. diam or larger dielectric-isolated substrate, which cannot be created with the conventional polysilicon deposition method.

Original languageEnglish
Pages (from-to)184-189
Number of pages6
JournalJournal of the Electrochemical Society
Volume138
Issue number1
DOIs
Publication statusPublished - Jan 1 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Soot Bonding Process and its Application to Si Dielectric Isolation'. Together they form a unique fingerprint.

Cite this