Source-drain engineering using atomically controlled heterojunctions for next-generation SiGe transistor applications (Selected topics in Applied physics: Technology evolution for silicon nano-electronics)

Kohei Hamaya; Yuichiro Ando; Taizoh Sadoh

Source-drain engineering using atomically controlled heterojunctions for next-generation SiGe transistor applications (Selected topics in Applied physics: Technology evolution for silicon nano-electronics)

Kohei Hamaya, Yuichiro Ando, Taizoh Sadoh

Electronic Devices

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	10101-1〜7
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	50
Issue number	1
Publication status	Published - Jan 2011

Access to Document

http://id.ndl.go.jp/bib/10948004

Cite this

Source-drain engineering using atomically controlled heterojunctions for next-generation SiGe transistor applications (Selected topics in Applied physics : Technology evolution for silicon nano-electronics). / Hamaya, Kohei; Ando, Yuichiro; Sadoh, Taizoh.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 50, No. 1, 01.2011, p. 10101-1〜7.

Research output: Contribution to journal › Article › peer-review

@article{28f0334cde2e4da8aa93b07ad0b836df,

title = "Source-drain engineering using atomically controlled heterojunctions for next-generation SiGe transistor applications (Selected topics in Applied physics: Technology evolution for silicon nano-electronics)",

author = "Kohei Hamaya and Yuichiro Ando and Taizoh Sadoh",

year = "2011",

month = jan,

language = "English",

volume = "50",

pages = "10101--1〜7",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Source-drain engineering using atomically controlled heterojunctions for next-generation SiGe transistor applications (Selected topics in Applied physics

T2 - Technology evolution for silicon nano-electronics)

AU - Hamaya, Kohei

AU - Ando, Yuichiro

AU - Sadoh, Taizoh

PY - 2011/1

Y1 - 2011/1

M3 - Article

SN - 0021-4922

VL - 50

SP - 10101-1〜7

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 1

ER -