Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors

Keisuke Yamamoto, Takeshi Yamanaka, Ryuji Ueno, Kana Hirayama, Haigui Yang, Dong Wang, Hiroshi Nakashima

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We established fabrication methods for high-quality Ge n +/p and p +/n junctions using thermal diffusion of P and implantation of B, respectively. The carrier concentrations in n + and p + layers were as high as 4 × 10 19 and 2 × 10 19 cm - 3, respectively. It was found that a peripheral surface-state current dominates the reverse leakage current in an n +/p junction diode. The protection of junction surfaces from plasma damage during the SiO 2 deposition was essential to achieve high-quality source/drain junctions. The surface passivation with a GeO 2 interlayer was harmful to an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) because of an increase in a surface leakage current due to inversion carriers. For a p-channel MOSFET, on the other hand, the GeO 2 interlayer plays a role in decreasing the surface leakage current.

Original languageEnglish
Pages (from-to)3382-3386
Number of pages5
JournalThin Solid Films
Volume520
Issue number8
DOIs
Publication statusPublished - Feb 1 2012

Fingerprint

MOSFET devices
metal oxide semiconductors
field effect transistors
Leakage currents
Fabrication
fabrication
leakage
p-n junctions
interlayers
Thermal diffusion
Surface states
junction diodes
Passivation
Carrier concentration
thermal diffusion
Diodes
passivity
implantation
Plasmas
inversions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors. / Yamamoto, Keisuke; Yamanaka, Takeshi; Ueno, Ryuji; Hirayama, Kana; Yang, Haigui; Wang, Dong; Nakashima, Hiroshi.

In: Thin Solid Films, Vol. 520, No. 8, 01.02.2012, p. 3382-3386.

Research output: Contribution to journalArticle

Yamamoto, Keisuke ; Yamanaka, Takeshi ; Ueno, Ryuji ; Hirayama, Kana ; Yang, Haigui ; Wang, Dong ; Nakashima, Hiroshi. / Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors. In: Thin Solid Films. 2012 ; Vol. 520, No. 8. pp. 3382-3386.
@article{4d9ea0effda54ff8b442ed75784242cc,
title = "Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors",
abstract = "We established fabrication methods for high-quality Ge n +/p and p +/n junctions using thermal diffusion of P and implantation of B, respectively. The carrier concentrations in n + and p + layers were as high as 4 × 10 19 and 2 × 10 19 cm - 3, respectively. It was found that a peripheral surface-state current dominates the reverse leakage current in an n +/p junction diode. The protection of junction surfaces from plasma damage during the SiO 2 deposition was essential to achieve high-quality source/drain junctions. The surface passivation with a GeO 2 interlayer was harmful to an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) because of an increase in a surface leakage current due to inversion carriers. For a p-channel MOSFET, on the other hand, the GeO 2 interlayer plays a role in decreasing the surface leakage current.",
author = "Keisuke Yamamoto and Takeshi Yamanaka and Ryuji Ueno and Kana Hirayama and Haigui Yang and Dong Wang and Hiroshi Nakashima",
year = "2012",
month = "2",
day = "1",
doi = "10.1016/j.tsf.2011.10.047",
language = "English",
volume = "520",
pages = "3382--3386",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "8",

}

TY - JOUR

T1 - Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors

AU - Yamamoto, Keisuke

AU - Yamanaka, Takeshi

AU - Ueno, Ryuji

AU - Hirayama, Kana

AU - Yang, Haigui

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2012/2/1

Y1 - 2012/2/1

N2 - We established fabrication methods for high-quality Ge n +/p and p +/n junctions using thermal diffusion of P and implantation of B, respectively. The carrier concentrations in n + and p + layers were as high as 4 × 10 19 and 2 × 10 19 cm - 3, respectively. It was found that a peripheral surface-state current dominates the reverse leakage current in an n +/p junction diode. The protection of junction surfaces from plasma damage during the SiO 2 deposition was essential to achieve high-quality source/drain junctions. The surface passivation with a GeO 2 interlayer was harmful to an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) because of an increase in a surface leakage current due to inversion carriers. For a p-channel MOSFET, on the other hand, the GeO 2 interlayer plays a role in decreasing the surface leakage current.

AB - We established fabrication methods for high-quality Ge n +/p and p +/n junctions using thermal diffusion of P and implantation of B, respectively. The carrier concentrations in n + and p + layers were as high as 4 × 10 19 and 2 × 10 19 cm - 3, respectively. It was found that a peripheral surface-state current dominates the reverse leakage current in an n +/p junction diode. The protection of junction surfaces from plasma damage during the SiO 2 deposition was essential to achieve high-quality source/drain junctions. The surface passivation with a GeO 2 interlayer was harmful to an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) because of an increase in a surface leakage current due to inversion carriers. For a p-channel MOSFET, on the other hand, the GeO 2 interlayer plays a role in decreasing the surface leakage current.

UR - http://www.scopus.com/inward/record.url?scp=84857063945&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857063945&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.10.047

DO - 10.1016/j.tsf.2011.10.047

M3 - Article

VL - 520

SP - 3382

EP - 3386

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 8

ER -