Spatial and temporal luminescence dynamics in an InxGa1-xN single quantum well probed by near-field optical microscopy

Akio Kaneta, Koichi Okamoto, Yoichi Kawakami, Shigeo Fujita, Giichi Marutsuki, Yukio Narukawa, Takashi Mukai

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Abstract

The spatial and temporal luminescence dynamics in an InxGa1-xN single quantum well was investigated by using near-field optical microscopy. The near-field photoluminescence (PL) revealed the variation of both intensity and peak energy in PL spectra. It was found that the PL peak energy increased with increasing excitation power in both the strong intensity region and the weak intensity region.

Original languageEnglish
Pages (from-to)4353-4355
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number23
DOIs
Publication statusPublished - Dec 2 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Kaneta, A., Okamoto, K., Kawakami, Y., Fujita, S., Marutsuki, G., Narukawa, Y., & Mukai, T. (2002). Spatial and temporal luminescence dynamics in an InxGa1-xN single quantum well probed by near-field optical microscopy. Applied Physics Letters, 81(23), 4353-4355. https://doi.org/10.1063/1.1526917