Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode

Akio Kaneta, Tomoaki Izumi, Koichi Okamoto, Yoichi Kawakami, Shigeo Fujita, Yoshihito Narita, Tsutomu Inoue, Takashi Mukai

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW)-based light-emitting diode structure by near-field optical microscopy under the illumination-collection mode. The obtained PL mapping image revealed a variation in both peak and intensity of PL spectra according to the probing location with a scale less than about 200 nm. The variation in PL intensity is from 0.8 to 1.8 in arbitrary units indicating that the internal quantum efficiency fluctuates from 10% to 50% within the active layer.

Original languageEnglish
Pages (from-to)110-111
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number1
DOIs
Publication statusPublished - Jan 2001

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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