Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures

A. Kaneta; G. Marutsuki; K. Okamoto; Y. Kawakami; Y. Nakagawa; G. Shinomiya; T. Mukai; Sg Fujita

doi:10.1002/1521-3951(200111)228:1<153::AID-PSSB153>3.0.CO;2-Z

Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures

A. Kaneta, G. Marutsuki, K. Okamoto, Y. Kawakami, Y. Nakagawa, G. Shinomiya, T. Mukai, Sg Fujita

Department of Fundamental Organic Chemistry

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL intensity of fluorescence image is uniform at 77 K, but the dark spot areas were extended with increasing temperature. The nearfield PL images revealed the variation of both peak energy and intensity in PL spectra according to the probing location with the scale less than a few hundreds nm.

Original language	English
Pages (from-to)	153-156
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	228
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200111)228:1<153::AID-PSSB153>3.0.CO;2-Z
Publication status	Published - Nov 1 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-3951(200111)228:1<153::AID-PSSB153>3.0.CO;2-Z

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abstract = "Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL intensity of fluorescence image is uniform at 77 K, but the dark spot areas were extended with increasing temperature. The nearfield PL images revealed the variation of both peak energy and intensity in PL spectra according to the probing location with the scale less than a few hundreds nm.",

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AU - Kaneta, A.

AU - Marutsuki, G.

AU - Okamoto, K.

AU - Kawakami, Y.

AU - Nakagawa, Y.

AU - Shinomiya, G.

AU - Mukai, T.

AU - Fujita, Sg

PY - 2001/11/1

Y1 - 2001/11/1

N2 - Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL intensity of fluorescence image is uniform at 77 K, but the dark spot areas were extended with increasing temperature. The nearfield PL images revealed the variation of both peak energy and intensity in PL spectra according to the probing location with the scale less than a few hundreds nm.

AB - Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL intensity of fluorescence image is uniform at 77 K, but the dark spot areas were extended with increasing temperature. The nearfield PL images revealed the variation of both peak energy and intensity in PL spectra according to the probing location with the scale less than a few hundreds nm.

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Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures

Abstract

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