Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures

A. Kaneta, G. Marutsuki, K. Okamoto, Y. Kawakami, Y. Nakagawa, G. Shinomiya, T. Mukai, Sg Fujita

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL intensity of fluorescence image is uniform at 77 K, but the dark spot areas were extended with increasing temperature. The nearfield PL images revealed the variation of both peak energy and intensity in PL spectra according to the probing location with the scale less than a few hundreds nm.

Original languageEnglish
Pages (from-to)153-156
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume228
Issue number1
DOIs
Publication statusPublished - Nov 1 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Kaneta, A., Marutsuki, G., Okamoto, K., Kawakami, Y., Nakagawa, Y., Shinomiya, G., Mukai, T., & Fujita, S. (2001). Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures. Physica Status Solidi (B) Basic Research, 228(1), 153-156. https://doi.org/10.1002/1521-3951(200111)228:1<153::AID-PSSB153>3.0.CO;2-Z