Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector

M. Sugiho, T. Kamae, K. Makishima, T. Takahashi, T. Murakami, M. Tashiro, Y. Fukazawa, M. Kaneda, T. Tamura, Naoko Iyomoto, M. Sugizaki, H. Ozawa, A. Kubota, K. Nakazawa, K. Yamaoka, M. Kokubun, N. Ota, C. Tanihata, N. Isobe, S. KuboY. Terada, Y. Matsumoto, Y. Uchiyama, D. Yonetoku, I. Takahashi, J. Kotoku, S. Watanabe, Y. Ezoe

Research output: Contribution to conferencePaperpeer-review

Abstract

The ASTRO-E Hard X-ray Detector utilizes GSO/BGO well-type phoswich counters in compound-eye configuration, to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon PIN diodes of 2 mm in thickness and 21.5 × 21.5mm2 in size were newly developed, and placed in front of the GSO scintillators. The PIN diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured spatially-resolved response of the PIN diode, and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the PIN diode, respectively.

Original languageEnglish
Publication statusPublished - Dec 1 2000
Externally publishedYes
Event2000 IEEE Nuclear Science Symposium Conference Record - Lyon, France
Duration: Oct 15 2000Oct 20 2000

Other

Other2000 IEEE Nuclear Science Symposium Conference Record
CountryFrance
CityLyon
Period10/15/0010/20/00

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Industrial and Manufacturing Engineering

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