Species responsible for Si-H2 bond formation in a-Si:H films deposited using silane high frequency discharges

Masaharu Shiratani; Kazunori Koga; Naoto Kaguchi; Kouki Bando; Yukio Watanabe

doi:10.1016/j.tsf.2005.08.015

Species responsible for Si-H₂ bond formation in a-Si:H films deposited using silane high frequency discharges

Masaharu Shiratani, Kazunori Koga, Naoto Kaguchi, Kouki Bando, Yukio Watanabe

Research output: Contribution to journal › Article › peer-review

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Abstract

Species responsible for Si-H₂ bond formation in a-Si:H films have been studied by using a cluster-suppressed plasma CVD reactor of a diode configuration. The concentration of Si-H₂ bonds in a-Si:H films linearly decreases with decreasing the volume fraction V_f of clusters incorporated into the films, while the density of higher-order silane such as Si₂H₅ and Si₃H₇ correlates little with the bond concentration. The experimental results obtained using the diode configuration motivate us to employ a reactor of triode configuration in order to reduce the V_f value. The a-Si:H Schottky solar cell prepared with this configuration has the high initial fill factor FF = 0.60 and high stabilized value after light soaking FF = 0.56.

Original language	English
Pages (from-to)	17-21
Number of pages	5
Journal	Thin Solid Films
Volume	506-507
DOIs	https://doi.org/10.1016/j.tsf.2005.08.015
Publication status	Published - May 26 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.08.015

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title = "Species responsible for Si-H2 bond formation in a-Si:H films deposited using silane high frequency discharges",

abstract = "Species responsible for Si-H2 bond formation in a-Si:H films have been studied by using a cluster-suppressed plasma CVD reactor of a diode configuration. The concentration of Si-H2 bonds in a-Si:H films linearly decreases with decreasing the volume fraction Vf of clusters incorporated into the films, while the density of higher-order silane such as Si2H5 and Si3H7 correlates little with the bond concentration. The experimental results obtained using the diode configuration motivate us to employ a reactor of triode configuration in order to reduce the Vf value. The a-Si:H Schottky solar cell prepared with this configuration has the high initial fill factor FF = 0.60 and high stabilized value after light soaking FF = 0.56.",

author = "Masaharu Shiratani and Kazunori Koga and Naoto Kaguchi and Kouki Bando and Yukio Watanabe",

note = "Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research (A) from the Japan Society of the Promotion of Science and the New Energy and Industrial Technology Development Organization (NEDO). We wish to express our sincere thanks to Dr. A. Matsuda and M. Kondo, AIST, for providing QMS. We also wish thank Messrs T. Kinoshita and H. Matsuzaki who contributed greatly to the preparation of the experimental setup. The FT-IR measurements were carried out at the Center of Advanced Instrumental Analysis, Kyushu University. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2006",

month = may,

day = "26",

doi = "10.1016/j.tsf.2005.08.015",

language = "English",

volume = "506-507",

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T1 - Species responsible for Si-H2 bond formation in a-Si:H films deposited using silane high frequency discharges

AU - Shiratani, Masaharu

AU - Koga, Kazunori

AU - Kaguchi, Naoto

AU - Bando, Kouki

AU - Watanabe, Yukio

N1 - Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research (A) from the Japan Society of the Promotion of Science and the New Energy and Industrial Technology Development Organization (NEDO). We wish to express our sincere thanks to Dr. A. Matsuda and M. Kondo, AIST, for providing QMS. We also wish thank Messrs T. Kinoshita and H. Matsuzaki who contributed greatly to the preparation of the experimental setup. The FT-IR measurements were carried out at the Center of Advanced Instrumental Analysis, Kyushu University. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006/5/26

Y1 - 2006/5/26

N2 - Species responsible for Si-H2 bond formation in a-Si:H films have been studied by using a cluster-suppressed plasma CVD reactor of a diode configuration. The concentration of Si-H2 bonds in a-Si:H films linearly decreases with decreasing the volume fraction Vf of clusters incorporated into the films, while the density of higher-order silane such as Si2H5 and Si3H7 correlates little with the bond concentration. The experimental results obtained using the diode configuration motivate us to employ a reactor of triode configuration in order to reduce the Vf value. The a-Si:H Schottky solar cell prepared with this configuration has the high initial fill factor FF = 0.60 and high stabilized value after light soaking FF = 0.56.

AB - Species responsible for Si-H2 bond formation in a-Si:H films have been studied by using a cluster-suppressed plasma CVD reactor of a diode configuration. The concentration of Si-H2 bonds in a-Si:H films linearly decreases with decreasing the volume fraction Vf of clusters incorporated into the films, while the density of higher-order silane such as Si2H5 and Si3H7 correlates little with the bond concentration. The experimental results obtained using the diode configuration motivate us to employ a reactor of triode configuration in order to reduce the Vf value. The a-Si:H Schottky solar cell prepared with this configuration has the high initial fill factor FF = 0.60 and high stabilized value after light soaking FF = 0.56.

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JO - Thin Solid Films

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ER -

Species responsible for Si-H₂ bond formation in a-Si:H films deposited using silane high frequency discharges

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