Species responsible for Si-H2 bond formation in a-Si:H films deposited using silane high frequency discharges

Masaharu Shiratani, Kazunori Koga, Naoto Kaguchi, Kouki Bando, Yukio Watanabe

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Abstract

Species responsible for Si-H2 bond formation in a-Si:H films have been studied by using a cluster-suppressed plasma CVD reactor of a diode configuration. The concentration of Si-H2 bonds in a-Si:H films linearly decreases with decreasing the volume fraction Vf of clusters incorporated into the films, while the density of higher-order silane such as Si2H5 and Si3H7 correlates little with the bond concentration. The experimental results obtained using the diode configuration motivate us to employ a reactor of triode configuration in order to reduce the Vf value. The a-Si:H Schottky solar cell prepared with this configuration has the high initial fill factor FF = 0.60 and high stabilized value after light soaking FF = 0.56.

Original languageEnglish
Pages (from-to)17-21
Number of pages5
JournalThin Solid Films
Volume506-507
DOIs
Publication statusPublished - May 26 2006

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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