Spectroscopic ellipsometry characterization of the optical properties and thermal stability of Zr O2 films made by ion-beam assisted deposition

C. V. Ramana, S. Utsunomiya, R. C. Ewing, U. Becker, V. V. Atuchin, V. Sh Aliev, V. N. Kruchinin

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The optical properties, interface structure, and thermal stability of the Zr O2 films grown on Si(100) were investigated in detail. A 2 nm thick interfacial layer (IL) is formed at the Zr O2 -Si interface for the as-grown Zr O2. The optical constants of Zr O2 films and IL correspond to amorphous- Zr O2 and amorphous- Si O2, respectively. The oxidation and IL growth at 900 °C, as a function of annealing time, exhibit a two-step behavior with a slow and a fast growth-rate zones. The transition from a zone of slow to fast rate is attributed to structurally modified Zr O2 facilitating the faster oxygen transport to the Zr O2 Si interface.

Original languageEnglish
Article number011917
JournalApplied Physics Letters
Issue number1
Publication statusPublished - Jan 16 2008
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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