Spin-coated indium oxide thin film on alumina and silicon substrates and their gas sensing properties

Wan Young Chung; Go Sakai; Kengo Shimanoe; Norio Miura; Duk Dong Lee; Noboru Yamazoe

doi:10.1016/S0925-4005(99)00419-0

Spin-coated indium oxide thin film on alumina and silicon substrates and their gas sensing properties

Wan Young Chung, Go Sakai, Kengo Shimanoe, Norio Miura, Duk Dong Lee, Noboru Yamazoe

Functional Materials Science

Research output: Contribution to journal › Conference article › peer-review

12 Citations (Scopus)

Abstract

Thin films of indium oxide were prepared on alumina and silicon substrates by spin-coating from an aqueous acetic acid solution dissolving In(OH)₃ and ammonium carboxymethyl cellulose. The films could cover well the large grains of rough alumina as well as the flat surface of silicon. By changing the number of spin-coating, the film thickness was well controlled between 70 nm and 210 nm on alumina or between 65 nm and 220 nm on silicon, as observed by cross-sectional FE-SEM. Gas sensing properties including sensitivity, selectivity and the rates of response and recovery were strongly dependent on the kind of substrate, film thickness and operating temperature.

Original language	English
Pages (from-to)	312-315
Number of pages	4
Journal	Sensors and Actuators, B: Chemical
Volume	65
Issue number	1
DOIs	https://doi.org/10.1016/S0925-4005(99)00419-0
Publication status	Published - Jun 30 2000
Event	IMCS-7: 7th International Meeting on Chemical Sensors - Beijing, China Duration: Jul 27 1998 → Jul 30 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0925-4005(99)00419-0

Cite this

@article{9ca026ae705b47e78372ad84288a68c6,

title = "Spin-coated indium oxide thin film on alumina and silicon substrates and their gas sensing properties",

abstract = "Thin films of indium oxide were prepared on alumina and silicon substrates by spin-coating from an aqueous acetic acid solution dissolving In(OH)3 and ammonium carboxymethyl cellulose. The films could cover well the large grains of rough alumina as well as the flat surface of silicon. By changing the number of spin-coating, the film thickness was well controlled between 70 nm and 210 nm on alumina or between 65 nm and 220 nm on silicon, as observed by cross-sectional FE-SEM. Gas sensing properties including sensitivity, selectivity and the rates of response and recovery were strongly dependent on the kind of substrate, film thickness and operating temperature.",

author = "Chung, {Wan Young} and Go Sakai and Kengo Shimanoe and Norio Miura and Lee, {Duk Dong} and Noboru Yamazoe",

year = "2000",

month = jun,

day = "30",

doi = "10.1016/S0925-4005(99)00419-0",

language = "English",

volume = "65",

pages = "312--315",

journal = "Sensors and Actuators B: Chemical",

issn = "0925-4005",

publisher = "Elsevier",

number = "1",

note = "IMCS-7: 7th International Meeting on Chemical Sensors ; Conference date: 27-07-1998 Through 30-07-1998",

}

TY - JOUR

T1 - Spin-coated indium oxide thin film on alumina and silicon substrates and their gas sensing properties

AU - Chung, Wan Young

AU - Sakai, Go

AU - Shimanoe, Kengo

AU - Miura, Norio

AU - Lee, Duk Dong

AU - Yamazoe, Noboru

PY - 2000/6/30

Y1 - 2000/6/30

N2 - Thin films of indium oxide were prepared on alumina and silicon substrates by spin-coating from an aqueous acetic acid solution dissolving In(OH)3 and ammonium carboxymethyl cellulose. The films could cover well the large grains of rough alumina as well as the flat surface of silicon. By changing the number of spin-coating, the film thickness was well controlled between 70 nm and 210 nm on alumina or between 65 nm and 220 nm on silicon, as observed by cross-sectional FE-SEM. Gas sensing properties including sensitivity, selectivity and the rates of response and recovery were strongly dependent on the kind of substrate, film thickness and operating temperature.

AB - Thin films of indium oxide were prepared on alumina and silicon substrates by spin-coating from an aqueous acetic acid solution dissolving In(OH)3 and ammonium carboxymethyl cellulose. The films could cover well the large grains of rough alumina as well as the flat surface of silicon. By changing the number of spin-coating, the film thickness was well controlled between 70 nm and 210 nm on alumina or between 65 nm and 220 nm on silicon, as observed by cross-sectional FE-SEM. Gas sensing properties including sensitivity, selectivity and the rates of response and recovery were strongly dependent on the kind of substrate, film thickness and operating temperature.

UR - http://www.scopus.com/inward/record.url?scp=0034733270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034733270&partnerID=8YFLogxK

U2 - 10.1016/S0925-4005(99)00419-0

DO - 10.1016/S0925-4005(99)00419-0

M3 - Conference article

AN - SCOPUS:0034733270

SN - 0925-4005

VL - 65

SP - 312

EP - 315

JO - Sensors and Actuators B: Chemical

JF - Sensors and Actuators B: Chemical

IS - 1

T2 - IMCS-7: 7th International Meeting on Chemical Sensors

Y2 - 27 July 1998 through 30 July 1998

ER -

Spin-coated indium oxide thin film on alumina and silicon substrates and their gas sensing properties

Abstract

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