Spin-dependent CPP transport in SnOx/Co multilayers

Kimihide Matsuyama, Y. Sawamoto, K. Nishihata

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

In this article, we report on a spin-dependent CPP transport observed in novel semiconductive-oxide/ferromagnet multilayers of [SnOx(t nm)/Co(30 nm)/SnOx(t nm)/Co(2 nm)/NiFe(16 nm)/Co(2 nm)]×9, deposited with a multi-target magnetron sputtering system. The measured electrical conductivity σ shows a linear behaviour in the ln(σ) vs. T-1 plot at the temperature range of 120<T<170 K, which demonstrates thermionic electron transport through the SnOx layer. The thermal activation energy for the transport was evaluated as an order of 0.01 erg from the linear part of the plot. Though the values of α show marked scattering, the mean value decreases from +3.0×10-3 (t = 4 nm) to -3.5×10-3 (t = 32 nm) with the increase of t. Negative magnetoresistance was observed in two orthogonal directions of in-plane external fields. An MR ratio of 0.24% (ΔR = 0.20 Ω, Rs = 83 Ω) is observed at room temperature for the multilayer with t = 16 nm, where the saturation field is 350 Oe.

Original languageEnglish
Pages (from-to)61-63
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume198
DOIs
Publication statusPublished - Jun 1 1999
EventProceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can
Duration: Jun 14 1998Jun 19 1998

Fingerprint

Multilayers
plots
thermionics
Magnetoresistance
Magnetron sputtering
Oxides
magnetron sputtering
Activation energy
Scattering
activation energy
saturation
Temperature
electrical resistivity
oxides
room temperature
scattering
electrons
temperature
3-(2-carboxypiperazin-4-yl)propyl-1-phosphonic acid
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Spin-dependent CPP transport in SnOx/Co multilayers. / Matsuyama, Kimihide; Sawamoto, Y.; Nishihata, K.

In: Journal of Magnetism and Magnetic Materials, Vol. 198, 01.06.1999, p. 61-63.

Research output: Contribution to journalConference article

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N2 - In this article, we report on a spin-dependent CPP transport observed in novel semiconductive-oxide/ferromagnet multilayers of [SnOx(t nm)/Co(30 nm)/SnOx(t nm)/Co(2 nm)/NiFe(16 nm)/Co(2 nm)]×9, deposited with a multi-target magnetron sputtering system. The measured electrical conductivity σ shows a linear behaviour in the ln(σ) vs. T-1 plot at the temperature range of 120<T<170 K, which demonstrates thermionic electron transport through the SnOx layer. The thermal activation energy for the transport was evaluated as an order of 0.01 erg from the linear part of the plot. Though the values of α show marked scattering, the mean value decreases from +3.0×10-3 (t = 4 nm) to -3.5×10-3 (t = 32 nm) with the increase of t. Negative magnetoresistance was observed in two orthogonal directions of in-plane external fields. An MR ratio of 0.24% (ΔR = 0.20 Ω, Rs = 83 Ω) is observed at room temperature for the multilayer with t = 16 nm, where the saturation field is 350 Oe.

AB - In this article, we report on a spin-dependent CPP transport observed in novel semiconductive-oxide/ferromagnet multilayers of [SnOx(t nm)/Co(30 nm)/SnOx(t nm)/Co(2 nm)/NiFe(16 nm)/Co(2 nm)]×9, deposited with a multi-target magnetron sputtering system. The measured electrical conductivity σ shows a linear behaviour in the ln(σ) vs. T-1 plot at the temperature range of 120<T<170 K, which demonstrates thermionic electron transport through the SnOx layer. The thermal activation energy for the transport was evaluated as an order of 0.01 erg from the linear part of the plot. Though the values of α show marked scattering, the mean value decreases from +3.0×10-3 (t = 4 nm) to -3.5×10-3 (t = 32 nm) with the increase of t. Negative magnetoresistance was observed in two orthogonal directions of in-plane external fields. An MR ratio of 0.24% (ΔR = 0.20 Ω, Rs = 83 Ω) is observed at room temperature for the multilayer with t = 16 nm, where the saturation field is 350 Oe.

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