TY - JOUR
T1 - Spin Seebeck voltage enhancement by Mn system metals insertion at the interface between YIG and nonmagnetic layer
AU - Nakata, Fumiya
AU - Niimura, Takumi
AU - Kurokawa, Yuichiro
AU - Yuasa, Hiromi
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The spin Seebeck voltage was successfully increased by IrMn or Mn insertion into the interface Y3Fe5O12 and nonmagnetic Pt and TaW with positive and negative spin Hall angle, respectively. The magnitude of the spin Seebeck coefficient |S| of the samples with IrMn and Mn were higher than that with Ru insertion, which indicates that the existence of the magnetic moment is important for the spin Seebeck coefficient. Furthermore, |S| of the samples with IrMn and Mn were higher than oxide antiferromagnetic NiO, which suggests the metallic layer insertion is effective for enlarging |S| owing to the relatively long spin diffusion length. Since the inserted IrMn and NiO take the paramagnetic states as well as Mn, it is supposed that the spin fluctuation in the paramagnetic insertion layers play an important role in enhancing the spin current.
AB - The spin Seebeck voltage was successfully increased by IrMn or Mn insertion into the interface Y3Fe5O12 and nonmagnetic Pt and TaW with positive and negative spin Hall angle, respectively. The magnitude of the spin Seebeck coefficient |S| of the samples with IrMn and Mn were higher than that with Ru insertion, which indicates that the existence of the magnetic moment is important for the spin Seebeck coefficient. Furthermore, |S| of the samples with IrMn and Mn were higher than oxide antiferromagnetic NiO, which suggests the metallic layer insertion is effective for enlarging |S| owing to the relatively long spin diffusion length. Since the inserted IrMn and NiO take the paramagnetic states as well as Mn, it is supposed that the spin fluctuation in the paramagnetic insertion layers play an important role in enhancing the spin current.
UR - http://www.scopus.com/inward/record.url?scp=85065214810&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85065214810&partnerID=8YFLogxK
U2 - 10.7567/1347-4065/aafb5c
DO - 10.7567/1347-4065/aafb5c
M3 - Article
AN - SCOPUS:85065214810
SN - 0021-4922
VL - 58
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
M1 - SBBI04
ER -