Spin transport properties in polycrystalline Gd film and strip

S. Nonoguchi, Y. Ando, Y. Togawa, Takashi Kimura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Magneto-transport prosperities of the Gd film and wire have been investigated. Negative magnetoresistances due to the reduction of the spin entropy were observed at various temperatures. The magnetoresistance changes were found to depend on the direction of the in-plane magnetic field at low temperature because of the Lorenz magnetoresistance effect. The strong spin current absorption effect into the Gd was also found.

Original languageEnglish
Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
Pages1881-1884
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
Duration: Nov 21 2010Nov 24 2010

Other

Other2010 IEEE Region 10 Conference, TENCON 2010
CountryJapan
CityFukuoka
Period11/21/1011/24/10

Fingerprint

Magnetoresistance
Transport properties
Entropy
Wire
Magnetic fields
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Nonoguchi, S., Ando, Y., Togawa, Y., & Kimura, T. (2010). Spin transport properties in polycrystalline Gd film and strip. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 1881-1884). [5686393] https://doi.org/10.1109/TENCON.2010.5686393

Spin transport properties in polycrystalline Gd film and strip. / Nonoguchi, S.; Ando, Y.; Togawa, Y.; Kimura, Takashi.

TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 1881-1884 5686393.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nonoguchi, S, Ando, Y, Togawa, Y & Kimura, T 2010, Spin transport properties in polycrystalline Gd film and strip. in TENCON 2010 - 2010 IEEE Region 10 Conference., 5686393, pp. 1881-1884, 2010 IEEE Region 10 Conference, TENCON 2010, Fukuoka, Japan, 11/21/10. https://doi.org/10.1109/TENCON.2010.5686393
Nonoguchi S, Ando Y, Togawa Y, Kimura T. Spin transport properties in polycrystalline Gd film and strip. In TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 1881-1884. 5686393 https://doi.org/10.1109/TENCON.2010.5686393
Nonoguchi, S. ; Ando, Y. ; Togawa, Y. ; Kimura, Takashi. / Spin transport properties in polycrystalline Gd film and strip. TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. pp. 1881-1884
@inproceedings{6e2b2ad752254e9f8baa3708649cd9a1,
title = "Spin transport properties in polycrystalline Gd film and strip",
abstract = "Magneto-transport prosperities of the Gd film and wire have been investigated. Negative magnetoresistances due to the reduction of the spin entropy were observed at various temperatures. The magnetoresistance changes were found to depend on the direction of the in-plane magnetic field at low temperature because of the Lorenz magnetoresistance effect. The strong spin current absorption effect into the Gd was also found.",
author = "S. Nonoguchi and Y. Ando and Y. Togawa and Takashi Kimura",
year = "2010",
doi = "10.1109/TENCON.2010.5686393",
language = "English",
isbn = "9781424468904",
pages = "1881--1884",
booktitle = "TENCON 2010 - 2010 IEEE Region 10 Conference",

}

TY - GEN

T1 - Spin transport properties in polycrystalline Gd film and strip

AU - Nonoguchi, S.

AU - Ando, Y.

AU - Togawa, Y.

AU - Kimura, Takashi

PY - 2010

Y1 - 2010

N2 - Magneto-transport prosperities of the Gd film and wire have been investigated. Negative magnetoresistances due to the reduction of the spin entropy were observed at various temperatures. The magnetoresistance changes were found to depend on the direction of the in-plane magnetic field at low temperature because of the Lorenz magnetoresistance effect. The strong spin current absorption effect into the Gd was also found.

AB - Magneto-transport prosperities of the Gd film and wire have been investigated. Negative magnetoresistances due to the reduction of the spin entropy were observed at various temperatures. The magnetoresistance changes were found to depend on the direction of the in-plane magnetic field at low temperature because of the Lorenz magnetoresistance effect. The strong spin current absorption effect into the Gd was also found.

UR - http://www.scopus.com/inward/record.url?scp=79951604463&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951604463&partnerID=8YFLogxK

U2 - 10.1109/TENCON.2010.5686393

DO - 10.1109/TENCON.2010.5686393

M3 - Conference contribution

AN - SCOPUS:79951604463

SN - 9781424468904

SP - 1881

EP - 1884

BT - TENCON 2010 - 2010 IEEE Region 10 Conference

ER -