Spot-size converter integrated semiconductor optical amplifiers for optical gate applications

Shotaro Kitamura; Hiroshi Hatakeyama; Kiichi Hamamoto; Tatsuya Sasaki; Keiro Komatsu; Masayuki Yamaguchi

doi:10.1109/3.772178

Spot-size converter integrated semiconductor optical amplifiers for optical gate applications

Shotaro Kitamura, Hiroshi Hatakeyama, Kiichi Hamamoto, Tatsuya Sasaki, Keiro Komatsu, Masayuki Yamaguchi

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A spot-size converter integrated semiconductor optical amplifier (SSC-SOA) was developed as a gate element in an optical switch matrix for photonic switching applications. By a selective metal-organic vapor phase epitaxy technique, a bulk InGaAsP stripe, including an active region and thickness tapered SSC's, was grown. Wavelength composition of the stripe, strain on the stripe, and electrode coverage above the SSC region were optimized. As a result, gate operation for fiber-to-fiber gain of 0 dB was achieved at a low injection current of 30 mA, and the polarization dependence of the gain was eliminated as well.

Original language	English
Pages (from-to)	1067-1074
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	35
Issue number	7
DOIs	https://doi.org/10.1109/3.772178
Publication status	Published - Jul 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/3.772178

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abstract = "A spot-size converter integrated semiconductor optical amplifier (SSC-SOA) was developed as a gate element in an optical switch matrix for photonic switching applications. By a selective metal-organic vapor phase epitaxy technique, a bulk InGaAsP stripe, including an active region and thickness tapered SSC's, was grown. Wavelength composition of the stripe, strain on the stripe, and electrode coverage above the SSC region were optimized. As a result, gate operation for fiber-to-fiber gain of 0 dB was achieved at a low injection current of 30 mA, and the polarization dependence of the gain was eliminated as well.",

author = "Shotaro Kitamura and Hiroshi Hatakeyama and Kiichi Hamamoto and Tatsuya Sasaki and Keiro Komatsu and Masayuki Yamaguchi",

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AU - Kitamura, Shotaro

AU - Hatakeyama, Hiroshi

AU - Hamamoto, Kiichi

AU - Sasaki, Tatsuya

AU - Komatsu, Keiro

AU - Yamaguchi, Masayuki

PY - 1999/7

Y1 - 1999/7

N2 - A spot-size converter integrated semiconductor optical amplifier (SSC-SOA) was developed as a gate element in an optical switch matrix for photonic switching applications. By a selective metal-organic vapor phase epitaxy technique, a bulk InGaAsP stripe, including an active region and thickness tapered SSC's, was grown. Wavelength composition of the stripe, strain on the stripe, and electrode coverage above the SSC region were optimized. As a result, gate operation for fiber-to-fiber gain of 0 dB was achieved at a low injection current of 30 mA, and the polarization dependence of the gain was eliminated as well.

AB - A spot-size converter integrated semiconductor optical amplifier (SSC-SOA) was developed as a gate element in an optical switch matrix for photonic switching applications. By a selective metal-organic vapor phase epitaxy technique, a bulk InGaAsP stripe, including an active region and thickness tapered SSC's, was grown. Wavelength composition of the stripe, strain on the stripe, and electrode coverage above the SSC region were optimized. As a result, gate operation for fiber-to-fiber gain of 0 dB was achieved at a low injection current of 30 mA, and the polarization dependence of the gain was eliminated as well.

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Spot-size converter integrated semiconductor optical amplifiers for optical gate applications

Abstract

All Science Journal Classification (ASJC) codes

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