In-plane-aligned a-axis-oriented YBa2Cu3O 7-δ (YBCO) thin films are attractive for the formation of planar intrinsic Josephson devices. In this study, these films were deposited by dc sputtering on LaSrGaO4 (LSGO) (100) substrates and the dependence of the characteristics on the deposition conditions was investigated. In-plane-aligned a-axis-oriented YBCO thin films were successfully grown in the substrate temperature range of 555-615°C. With the temperature gradient method, it was seen that the critical temperature of the film increased to 81 K. The current-voltage characteristic along the c-axis exhibited clear multibranch structures. These results indicate that ion-cleaning of the substrate surface broadens the growth temperature range of these films and planar intrinsic Josephson devices can be fabricated from these films.
|Number of pages||4|
|Journal||IEICE Transactions on Electronics|
|Publication status||Published - Jan 1 2004|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering