TY - JOUR
T1 - Sputtering deposition of Al-doped zinc oxide thin films using mixed powder targets
AU - Ohshima, Tamiko
AU - Maeda, Takashi
AU - Tanaka, Yuki
AU - Kawasaki, Hiroharu
AU - Yagyu, Yoshihito
AU - Ihara, Takeshi
AU - Suda, Yoshiaki
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/1
Y1 - 2016/1
N2 - Sputtering deposition generally uses high-density bulk targets. Such a fabrication process has various problems including deterioration of the material during heating and difficulty in mixing a large number of materials in precise proportions. However, these problems can be solved by using a powder target. In this study, we prepared Al-doped ZnO (AZO) as transparent conductive thin films by radio-frequency magnetron sputtering with powder and bulk targets. Both the powder and bulk targets formed crystalline structures. The ZnO (002) peak was observed in the X-ray diffraction measurements. The mean transparency and resistivity of the films prepared with the powder target were 82% and 0.548Ωcm, respectively. The deposition rate with the powder target was lower than that with the bulk target.
AB - Sputtering deposition generally uses high-density bulk targets. Such a fabrication process has various problems including deterioration of the material during heating and difficulty in mixing a large number of materials in precise proportions. However, these problems can be solved by using a powder target. In this study, we prepared Al-doped ZnO (AZO) as transparent conductive thin films by radio-frequency magnetron sputtering with powder and bulk targets. Both the powder and bulk targets formed crystalline structures. The ZnO (002) peak was observed in the X-ray diffraction measurements. The mean transparency and resistivity of the films prepared with the powder target were 82% and 0.548Ωcm, respectively. The deposition rate with the powder target was lower than that with the bulk target.
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U2 - 10.7567/JJAP.55.01AA08
DO - 10.7567/JJAP.55.01AA08
M3 - Article
AN - SCOPUS:84953204317
SN - 0021-4922
VL - 55
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 1
M1 - 01AA08
ER -