Thin film transistors (TFTs) using polycrystalline tin oxides (SnO- SnO2) channels were formed on glass by a conventional sputtering method and subsequent annealing treatments. SnO-channel TFTs showed p -type operation with on/off current ratios of ∼102 and field-effect mobilities of 0.24 cm2 V-1 s-1. Incorporation of excess oxygen to SnO channel layers did not generate holes but did electrons, which in turn led to n -type operation. This result is explained by transformation to a local SnO 2 -like structure and finally to SnO2. We propose a simple method to fabricate complimentary circuits by simultaneous selective formation of p - and n -channel TFTs.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)