Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits

Hisato Yabuta; Nobuyuki Kaji; Ryo Hayashi; Hideya Kumomi; Kenji Nomura; Toshio Kamiya; Masahiro Hirano; Hideo Hosono

doi:10.1063/1.3478213

Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits

Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Research output: Contribution to journal › Article › peer-review

188 Citations (Scopus)

Abstract

Thin film transistors (TFTs) using polycrystalline tin oxides (SnO- SnO₂) channels were formed on glass by a conventional sputtering method and subsequent annealing treatments. SnO-channel TFTs showed p -type operation with on/off current ratios of ∼10² and field-effect mobilities of 0.24 cm² V-1 s-1. Incorporation of excess oxygen to SnO channel layers did not generate holes but did electrons, which in turn led to n -type operation. This result is explained by transformation to a local SnO ₂ -like structure and finally to SnO₂. We propose a simple method to fabricate complimentary circuits by simultaneous selective formation of p - and n -channel TFTs.

Original language	English
Article number	072111
Journal	Applied Physics Letters
Volume	97
Issue number	7
DOIs	https://doi.org/10.1063/1.3478213
Publication status	Published - Aug 16 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3478213

Cite this

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title = "Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits",

abstract = "Thin film transistors (TFTs) using polycrystalline tin oxides (SnO- SnO2) channels were formed on glass by a conventional sputtering method and subsequent annealing treatments. SnO-channel TFTs showed p -type operation with on/off current ratios of ∼102 and field-effect mobilities of 0.24 cm2 V-1 s-1. Incorporation of excess oxygen to SnO channel layers did not generate holes but did electrons, which in turn led to n -type operation. This result is explained by transformation to a local SnO 2 -like structure and finally to SnO2. We propose a simple method to fabricate complimentary circuits by simultaneous selective formation of p - and n -channel TFTs.",

author = "Hisato Yabuta and Nobuyuki Kaji and Ryo Hayashi and Hideya Kumomi and Kenji Nomura and Toshio Kamiya and Masahiro Hirano and Hideo Hosono",

note = "Funding Information: We would like to thank Professor Isao Tanaka and Professor Fumiyasu Oba for helpful discussion. This research is partially supported by the Funding Program for World-Leading Innovative R&D on Science and Technology, Japan.",

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doi = "10.1063/1.3478213",

language = "English",

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T1 - Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits

AU - Yabuta, Hisato

AU - Kaji, Nobuyuki

AU - Hayashi, Ryo

AU - Kumomi, Hideya

AU - Nomura, Kenji

AU - Kamiya, Toshio

AU - Hirano, Masahiro

AU - Hosono, Hideo

N1 - Funding Information: We would like to thank Professor Isao Tanaka and Professor Fumiyasu Oba for helpful discussion. This research is partially supported by the Funding Program for World-Leading Innovative R&D on Science and Technology, Japan.

PY - 2010/8/16

Y1 - 2010/8/16

N2 - Thin film transistors (TFTs) using polycrystalline tin oxides (SnO- SnO2) channels were formed on glass by a conventional sputtering method and subsequent annealing treatments. SnO-channel TFTs showed p -type operation with on/off current ratios of ∼102 and field-effect mobilities of 0.24 cm2 V-1 s-1. Incorporation of excess oxygen to SnO channel layers did not generate holes but did electrons, which in turn led to n -type operation. This result is explained by transformation to a local SnO 2 -like structure and finally to SnO2. We propose a simple method to fabricate complimentary circuits by simultaneous selective formation of p - and n -channel TFTs.

AB - Thin film transistors (TFTs) using polycrystalline tin oxides (SnO- SnO2) channels were formed on glass by a conventional sputtering method and subsequent annealing treatments. SnO-channel TFTs showed p -type operation with on/off current ratios of ∼102 and field-effect mobilities of 0.24 cm2 V-1 s-1. Incorporation of excess oxygen to SnO channel layers did not generate holes but did electrons, which in turn led to n -type operation. This result is explained by transformation to a local SnO 2 -like structure and finally to SnO2. We propose a simple method to fabricate complimentary circuits by simultaneous selective formation of p - and n -channel TFTs.

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Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits

Abstract

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