Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits

Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Research output: Contribution to journalArticlepeer-review

188 Citations (Scopus)

Abstract

Thin film transistors (TFTs) using polycrystalline tin oxides (SnO- SnO2) channels were formed on glass by a conventional sputtering method and subsequent annealing treatments. SnO-channel TFTs showed p -type operation with on/off current ratios of ∼102 and field-effect mobilities of 0.24 cm2 V-1 s-1. Incorporation of excess oxygen to SnO channel layers did not generate holes but did electrons, which in turn led to n -type operation. This result is explained by transformation to a local SnO 2 -like structure and finally to SnO2. We propose a simple method to fabricate complimentary circuits by simultaneous selective formation of p - and n -channel TFTs.

Original languageEnglish
Article number072111
JournalApplied Physics Letters
Volume97
Issue number7
DOIs
Publication statusPublished - Aug 16 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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