Sputtering Growth of Metal Oxynitride Semiconductors for Excitonic Devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effects of substrate surface polarity on the growth of sputter-deposited (\text{ZnO})_{x}}(\text{InN})_{1-x} (called 'ZION' hereinafter) films have been investigated. ZION films were deposited on Zn-face and O-face ZnO substrates by radio-frequency magnetron sputtering. The ZION film on the Zn-face substrate has rough surface with the root mean square (RMS) roughness of 4.30 nm, whereas, the ZION film on O-face ZnO substrate has smooth surface with the RMS roughness of 2.71 nm. This result is attributed to the difference in Zn mobility on the substrate surfaces.

Original languageEnglish
Title of host publication2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728181769
DOIs
Publication statusPublished - Apr 8 2021
Event5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China
Duration: Apr 8 2021Apr 11 2021

Publication series

Name2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conference

Conference5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Country/TerritoryChina
CityChengdu
Period4/8/214/11/21

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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