Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces

Kenjiro Hayashi, Kouhei Morita, Seigi Mizuno, Hiroshi Tochihara, Tanaka Satoru

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Ordered nanofacet structures on vicinal 6H-SiC(0 0 0 1) surfaces, consisting of pairs of a (0 0 0 1) basal plane and a (1 1 over(2, ̄) n) facet, are investigated in terms of stable surface stacking of the (0 0 0 1) basal planes. The surface termination of S3 (or S3*), i.e., ABC (or A*C*B*), was suggested by a structural model based on quantized step-bunching, which typically gives a one-unit-cell bunched step configuration at the (1 1 over(2, ̄) n) facet. Here, we evaluate the surface termination at basal planes covered with a layer of silicon oxynitride by means of quantitative low-energy electron diffraction (LEED) analysis combined with scanning tunneling microscopy (STM), and show the validity of the structural model proposed.

Original languageEnglish
Pages (from-to)566-570
Number of pages5
JournalSurface Science
Volume603
Issue number3
DOIs
Publication statusPublished - Feb 1 2009

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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