Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces

Kenjiro Hayashi; Kouhei Morita; Seigi Mizuno; Hiroshi Tochihara; Satoru Tanaka

doi:10.1016/j.susc.2008.12.025

Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces

Kenjiro Hayashi, Kouhei Morita, Seigi Mizuno, Hiroshi Tochihara, Satoru Tanaka

Applied Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Ordered nanofacet structures on vicinal 6H-SiC(0 0 0 1) surfaces, consisting of pairs of a (0 0 0 1) basal plane and a (1 1 over(2, ̄) n) facet, are investigated in terms of stable surface stacking of the (0 0 0 1) basal planes. The surface termination of S3 (or S3*), i.e., ABC (or A*C*B*), was suggested by a structural model based on quantized step-bunching, which typically gives a one-unit-cell bunched step configuration at the (1 1 over(2, ̄) n) facet. Here, we evaluate the surface termination at basal planes covered with a layer of silicon oxynitride by means of quantitative low-energy electron diffraction (LEED) analysis combined with scanning tunneling microscopy (STM), and show the validity of the structural model proposed.

Original language	English
Pages (from-to)	566-570
Number of pages	5
Journal	Surface Science
Volume	603
Issue number	3
DOIs	https://doi.org/10.1016/j.susc.2008.12.025
Publication status	Published - Feb 1 2009

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.susc.2008.12.025

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title = "Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces",

abstract = "Ordered nanofacet structures on vicinal 6H-SiC(0 0 0 1) surfaces, consisting of pairs of a (0 0 0 1) basal plane and a (1 1 over(2,{\= }) n) facet, are investigated in terms of stable surface stacking of the (0 0 0 1) basal planes. The surface termination of S3 (or S3*), i.e., ABC (or A*C*B*), was suggested by a structural model based on quantized step-bunching, which typically gives a one-unit-cell bunched step configuration at the (1 1 over(2,{\= }) n) facet. Here, we evaluate the surface termination at basal planes covered with a layer of silicon oxynitride by means of quantitative low-energy electron diffraction (LEED) analysis combined with scanning tunneling microscopy (STM), and show the validity of the structural model proposed.",

author = "Kenjiro Hayashi and Kouhei Morita and Seigi Mizuno and Hiroshi Tochihara and Satoru Tanaka",

note = "Funding Information: This study was supported by the Industrial Technology Research Grant Program in {\textquoteleft}05 from NEDO of Japan, and KAKENHI (20340077).",

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doi = "10.1016/j.susc.2008.12.025",

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T1 - Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces

AU - Hayashi, Kenjiro

AU - Morita, Kouhei

AU - Mizuno, Seigi

AU - Tochihara, Hiroshi

AU - Tanaka, Satoru

N1 - Funding Information: This study was supported by the Industrial Technology Research Grant Program in ‘05 from NEDO of Japan, and KAKENHI (20340077).

PY - 2009/2/1

Y1 - 2009/2/1

N2 - Ordered nanofacet structures on vicinal 6H-SiC(0 0 0 1) surfaces, consisting of pairs of a (0 0 0 1) basal plane and a (1 1 over(2, ̄) n) facet, are investigated in terms of stable surface stacking of the (0 0 0 1) basal planes. The surface termination of S3 (or S3*), i.e., ABC (or A*C*B*), was suggested by a structural model based on quantized step-bunching, which typically gives a one-unit-cell bunched step configuration at the (1 1 over(2, ̄) n) facet. Here, we evaluate the surface termination at basal planes covered with a layer of silicon oxynitride by means of quantitative low-energy electron diffraction (LEED) analysis combined with scanning tunneling microscopy (STM), and show the validity of the structural model proposed.

AB - Ordered nanofacet structures on vicinal 6H-SiC(0 0 0 1) surfaces, consisting of pairs of a (0 0 0 1) basal plane and a (1 1 over(2, ̄) n) facet, are investigated in terms of stable surface stacking of the (0 0 0 1) basal planes. The surface termination of S3 (or S3*), i.e., ABC (or A*C*B*), was suggested by a structural model based on quantized step-bunching, which typically gives a one-unit-cell bunched step configuration at the (1 1 over(2, ̄) n) facet. Here, we evaluate the surface termination at basal planes covered with a layer of silicon oxynitride by means of quantitative low-energy electron diffraction (LEED) analysis combined with scanning tunneling microscopy (STM), and show the validity of the structural model proposed.

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DO - 10.1016/j.susc.2008.12.025

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JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 3

ER -

Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces

Abstract

All Science Journal Classification (ASJC) codes

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