Abstract
Ordered nanofacet structures on vicinal 6H-SiC(0 0 0 1) surfaces, consisting of pairs of a (0 0 0 1) basal plane and a (1 1 over(2, ̄) n) facet, are investigated in terms of stable surface stacking of the (0 0 0 1) basal planes. The surface termination of S3 (or S3*), i.e., ABC (or A*C*B*), was suggested by a structural model based on quantized step-bunching, which typically gives a one-unit-cell bunched step configuration at the (1 1 over(2, ̄) n) facet. Here, we evaluate the surface termination at basal planes covered with a layer of silicon oxynitride by means of quantitative low-energy electron diffraction (LEED) analysis combined with scanning tunneling microscopy (STM), and show the validity of the structural model proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 566-570 |
| Number of pages | 5 |
| Journal | Surface Science |
| Volume | 603 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Feb 1 2009 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
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Hayashi, K., Morita, K., Mizuno, S., Tochihara, H., & Satoru, T. (2009). Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces. Surface Science, 603(3), 566-570. https://doi.org/10.1016/j.susc.2008.12.025