Abstract
Ordered nanofacet structures on vicinal 6H-SiC(0 0 0 1) surfaces, consisting of pairs of a (0 0 0 1) basal plane and a (1 1 over(2, ̄) n) facet, are investigated in terms of stable surface stacking of the (0 0 0 1) basal planes. The surface termination of S3 (or S3*), i.e., ABC (or A*C*B*), was suggested by a structural model based on quantized step-bunching, which typically gives a one-unit-cell bunched step configuration at the (1 1 over(2, ̄) n) facet. Here, we evaluate the surface termination at basal planes covered with a layer of silicon oxynitride by means of quantitative low-energy electron diffraction (LEED) analysis combined with scanning tunneling microscopy (STM), and show the validity of the structural model proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 566-570 |
| Number of pages | 5 |
| Journal | Surface Science |
| Volume | 603 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Feb 1 2009 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
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Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces. / Hayashi, Kenjiro; Morita, Kouhei; Mizuno, Seigi; Tochihara, Hiroshi; Satoru, Tanaka.
In: Surface Science, Vol. 603, No. 3, 01.02.2009, p. 566-570.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces
AU - Hayashi, Kenjiro
AU - Morita, Kouhei
AU - Mizuno, Seigi
AU - Tochihara, Hiroshi
AU - Satoru, Tanaka
PY - 2009/2/1
Y1 - 2009/2/1
N2 - Ordered nanofacet structures on vicinal 6H-SiC(0 0 0 1) surfaces, consisting of pairs of a (0 0 0 1) basal plane and a (1 1 over(2, ̄) n) facet, are investigated in terms of stable surface stacking of the (0 0 0 1) basal planes. The surface termination of S3 (or S3*), i.e., ABC (or A*C*B*), was suggested by a structural model based on quantized step-bunching, which typically gives a one-unit-cell bunched step configuration at the (1 1 over(2, ̄) n) facet. Here, we evaluate the surface termination at basal planes covered with a layer of silicon oxynitride by means of quantitative low-energy electron diffraction (LEED) analysis combined with scanning tunneling microscopy (STM), and show the validity of the structural model proposed.
AB - Ordered nanofacet structures on vicinal 6H-SiC(0 0 0 1) surfaces, consisting of pairs of a (0 0 0 1) basal plane and a (1 1 over(2, ̄) n) facet, are investigated in terms of stable surface stacking of the (0 0 0 1) basal planes. The surface termination of S3 (or S3*), i.e., ABC (or A*C*B*), was suggested by a structural model based on quantized step-bunching, which typically gives a one-unit-cell bunched step configuration at the (1 1 over(2, ̄) n) facet. Here, we evaluate the surface termination at basal planes covered with a layer of silicon oxynitride by means of quantitative low-energy electron diffraction (LEED) analysis combined with scanning tunneling microscopy (STM), and show the validity of the structural model proposed.
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U2 - 10.1016/j.susc.2008.12.025
DO - 10.1016/j.susc.2008.12.025
M3 - Article
AN - SCOPUS:58749105615
VL - 603
SP - 566
EP - 570
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 3
ER -