Stacking domains of epitaxial few-layer graphene on SiC(0001)

H. Hibino, Seigi Mizuno, H. Kageshima, M. Nagase, H. Yamaguchi

    Research output: Contribution to journalArticle

    67 Citations (Scopus)

    Abstract

    We used low-energy electron microscopy (LEEM) and scanning tunneling microscopy (STM) to investigate domain structures of epitaxial few-layer graphene grown on SiC(0001). Dark-field (DF) LEEM images formed using (10) and (01) beams clearly indicate that bilayer graphene consists of two types of domains, which have threefold symmetry and are rotated by 180°with respect to each other. The DF LEEM images show clear domain contrasts at energies where (10)- and (01)-beam intensities calculated for bulk graphite are largely different. This means that the two types of domains are different in stacking: AB and AC stackings. The stacking domains are also supported by the STM images of bilayer graphene showing both hexagonal and honeycomb patterns.

    Original languageEnglish
    Article number085406
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume80
    Issue number8
    DOIs
    Publication statusPublished - Aug 6 2009

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    Graphite
    Epitaxial layers
    Graphene
    Electron microscopy
    graphene
    Scanning tunneling microscopy
    electron microscopy
    scanning tunneling microscopy
    energy
    alternating current
    graphite
    symmetry

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Stacking domains of epitaxial few-layer graphene on SiC(0001). / Hibino, H.; Mizuno, Seigi; Kageshima, H.; Nagase, M.; Yamaguchi, H.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 80, No. 8, 085406, 06.08.2009.

    Research output: Contribution to journalArticle

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