Standing-oscillatory natural convection computed for molten silicon in Czochralski configuration

Hiroshi Tomonari, Mitsuo Iwamoto, Koichi Kakimoto, Hiroyuki Ozoe, Kenjiro Suzuki, Tsuguo Fukuda

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Numerical computations were carried out for transient natural convection in molten silicon (Pr=0.016) in a relatively shallow crucible heated on the wetted surface and cooled by a crystal rod and at the free surface. At Ra=105, six separate roll cells appeared with triangular isotherms. In each cell, a coaxial double spiral streak line was found to exist. At Ra=106, the convection became oscillatory with eight peak temperatures in a circumferential direction. The oscillation was found to consist of simultaneous movement of the roll cells in both the vertical and circumferential directions.

Original languageEnglish
Pages (from-to)191-200
Number of pages10
JournalChemical Engineering Journal
Volume71
Issue number3
DOIs
Publication statusPublished - Dec 18 1998

Fingerprint

Silicon
Natural convection
silicon
Molten materials
convection
Crucibles
Isotherms
isotherm
oscillation
crystal
Crystals
temperature
Temperature
Direction compound
Convection

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Environmental Chemistry
  • Chemical Engineering(all)
  • Industrial and Manufacturing Engineering

Cite this

Standing-oscillatory natural convection computed for molten silicon in Czochralski configuration. / Tomonari, Hiroshi; Iwamoto, Mitsuo; Kakimoto, Koichi; Ozoe, Hiroyuki; Suzuki, Kenjiro; Fukuda, Tsuguo.

In: Chemical Engineering Journal, Vol. 71, No. 3, 18.12.1998, p. 191-200.

Research output: Contribution to journalArticle

Tomonari, Hiroshi ; Iwamoto, Mitsuo ; Kakimoto, Koichi ; Ozoe, Hiroyuki ; Suzuki, Kenjiro ; Fukuda, Tsuguo. / Standing-oscillatory natural convection computed for molten silicon in Czochralski configuration. In: Chemical Engineering Journal. 1998 ; Vol. 71, No. 3. pp. 191-200.
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