Statics and Dynamics of Hard Wall in a 1 μM Bubble Material

K. Matsuyama; K. Ishizu; H. Asada; K. Taniguchi

doi:10.1109/20.280949

Statics and Dynamics of Hard Wall in a 1 μM Bubble Material

K. Matsuyama, K. Ishizu, H. Asada, K. Taniguchi

Electronic Devices

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Abstract

The static and dynamic characteristics of the VBLs and their stability have been studied for a typical 1 μm bubble material. The measured static bubble collapse fields H_c ranged from 472 to 544 Oe, with discrete distributions. The maximum value of H_c and the width of the bias pulse field necessary for dynamic bubble collapse were reasonably explained by assuming the critical hard wall energy of 1.1 erg/cm². The VBLs were found to be stable for the 10⁷applications of a series bias pulse field of 80 Oe amplitude at room temperature.

Original language	English
Pages (from-to)	2575-2577
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	29
Issue number	6
DOIs	https://doi.org/10.1109/20.280949
Publication status	Published - Nov 1993

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.280949

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@article{e28caa1ee54c4e9b9749bbe6b83aa719,

title = "Statics and Dynamics of Hard Wall in a 1 μM Bubble Material",

abstract = "The static and dynamic characteristics of the VBLs and their stability have been studied for a typical 1 μm bubble material. The measured static bubble collapse fields Hc ranged from 472 to 544 Oe, with discrete distributions. The maximum value of Hc and the width of the bias pulse field necessary for dynamic bubble collapse were reasonably explained by assuming the critical hard wall energy of 1.1 erg/cm2. The VBLs were found to be stable for the 107applications of a series bias pulse field of 80 Oe amplitude at room temperature.",

author = "K. Matsuyama and K. Ishizu and H. Asada and K. Taniguchi",

year = "1993",

month = nov,

doi = "10.1109/20.280949",

language = "English",

volume = "29",

pages = "2575--2577",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Statics and Dynamics of Hard Wall in a 1 μM Bubble Material

AU - Matsuyama, K.

AU - Ishizu, K.

AU - Asada, H.

AU - Taniguchi, K.

PY - 1993/11

Y1 - 1993/11

N2 - The static and dynamic characteristics of the VBLs and their stability have been studied for a typical 1 μm bubble material. The measured static bubble collapse fields Hc ranged from 472 to 544 Oe, with discrete distributions. The maximum value of Hc and the width of the bias pulse field necessary for dynamic bubble collapse were reasonably explained by assuming the critical hard wall energy of 1.1 erg/cm2. The VBLs were found to be stable for the 107applications of a series bias pulse field of 80 Oe amplitude at room temperature.

AB - The static and dynamic characteristics of the VBLs and their stability have been studied for a typical 1 μm bubble material. The measured static bubble collapse fields Hc ranged from 472 to 544 Oe, with discrete distributions. The maximum value of Hc and the width of the bias pulse field necessary for dynamic bubble collapse were reasonably explained by assuming the critical hard wall energy of 1.1 erg/cm2. The VBLs were found to be stable for the 107applications of a series bias pulse field of 80 Oe amplitude at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=0027699271&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027699271&partnerID=8YFLogxK

U2 - 10.1109/20.280949

DO - 10.1109/20.280949

M3 - Article

AN - SCOPUS:0027699271

SN - 0018-9464

VL - 29

SP - 2575

EP - 2577

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 6

ER -

Statics and Dynamics of Hard Wall in a 1 μM Bubble Material

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