Statistical consideration of grain growth mechanism of multicrystalline Si by one directional solidification technique

Takashi Sekiguchi, Ronit R. Prakash, Karolin Jiptner, Xian Jia Luo, Jun Chen, Yoshiji Miyamura, Hirofumi Harada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The grain evolution of multicrystalline Si was studied using the ingot grown from microcrystalline template. The grain shape evolution and width increase are not monotonic but may have 3 stages. On the other hand, the grain boundary (GB) analysis suggests that there exit 2 reactions, namely random GB annihilation at the initial stage and Σ3 generation and annihilation at the steady state.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XVI
EditorsPeter Pichler, Peter Pichler
PublisherTrans Tech Publications Ltd
Pages35-40
Number of pages6
ISBN (Print)9783038356080
DOIs
Publication statusPublished - 2016
Event16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 - Bad Staffelstein, Germany
Duration: Sep 20 2015Sep 25 2015

Publication series

NameSolid State Phenomena
Volume242
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Other

Other16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015
Country/TerritoryGermany
CityBad Staffelstein
Period9/20/159/25/15

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Statistical consideration of grain growth mechanism of multicrystalline Si by one directional solidification technique'. Together they form a unique fingerprint.

Cite this