Status of surface electron/hole layer on oxide ferroelectrics

Yukio Watanabe, Yosuke Urakami, Sigeru Kaku, Daisuke Matsumoto

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

Backgrounds of studies of ferroelectric surface carrier layer are discussed in view of domain engineering, memory applications and size effects. Experimental evidence that supports the intrinsic surface carrier layer is presented and is discussed. Especially, we show the surface conduction of BaTiO3 single crystals in ultra high vacuum. To our knowledge, we report the first demonstration of the electrically controlled formation of both electron and hole surface conduction layer that are nonvolatile.

Original languageEnglish
Pages (from-to)13-18
Number of pages6
JournalFerroelectrics
Volume355
Issue number1 PART 1
DOIs
Publication statusPublished - Dec 1 2007
Event5th Asian Meeting on Ferroelectricity, AMF-5 - Noda, Japan
Duration: Sep 3 2006Sep 7 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Status of surface electron/hole layer on oxide ferroelectrics'. Together they form a unique fingerprint.

  • Cite this