Step-by-step growth of an epitaxial Si4O5N3 single layer on SiC(0001) in ultrahigh vacuum

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An epitaxial single Si4O5N3 layer was formed on a SiC(0001) surface using a step-by-step growth method in an ultrahigh vacuum condition. First, a silicon adsorbed SiC(0001) surface was prepared. The surface was then exposed to NO gas at 950 °C in order to form a Si2ON3 layer. Silicon was deposited on this surface and annealed to adjust the amount of adsorbed Si atoms. Finally, the surface was oxidized at 800 °C. The formation of a Si4O5N3 layer was confirmed by low-energy electron diffraction analysis, Auger electron spectroscopy, and scanning tunneling microscopy. Using this procedure, we were able to suppress the growth of graphite-like clusters on the surface, although silicate-like clusters still remained.

Original languageEnglish
Pages (from-to)22-27
Number of pages6
JournalSurface Science
Volume661
DOIs
Publication statusPublished - Jul 1 2017

Fingerprint

Ultrahigh vacuum
ultrahigh vacuum
Silicon
Silicates
Graphite
Low energy electron diffraction
Scanning tunneling microscopy
silicon
Auger electron spectroscopy
adatoms
Auger spectroscopy
electron spectroscopy
scanning tunneling microscopy
silicates
electron diffraction
graphite
Gases
Atoms
gases

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Step-by-step growth of an epitaxial Si4O5N3 single layer on SiC(0001) in ultrahigh vacuum. / Mizuno, Seigi; Matsuo, Tomomi; Nakagawa, Takeshi.

In: Surface Science, Vol. 661, 01.07.2017, p. 22-27.

Research output: Contribution to journalArticle

@article{a4df1ebcc43c48e78483b9aa91612fc9,
title = "Step-by-step growth of an epitaxial Si4O5N3 single layer on SiC(0001) in ultrahigh vacuum",
abstract = "An epitaxial single Si4O5N3 layer was formed on a SiC(0001) surface using a step-by-step growth method in an ultrahigh vacuum condition. First, a silicon adsorbed SiC(0001) surface was prepared. The surface was then exposed to NO gas at 950 °C in order to form a Si2ON3 layer. Silicon was deposited on this surface and annealed to adjust the amount of adsorbed Si atoms. Finally, the surface was oxidized at 800 °C. The formation of a Si4O5N3 layer was confirmed by low-energy electron diffraction analysis, Auger electron spectroscopy, and scanning tunneling microscopy. Using this procedure, we were able to suppress the growth of graphite-like clusters on the surface, although silicate-like clusters still remained.",
author = "Seigi Mizuno and Tomomi Matsuo and Takeshi Nakagawa",
year = "2017",
month = "7",
day = "1",
doi = "10.1016/j.susc.2017.03.004",
language = "English",
volume = "661",
pages = "22--27",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",

}

TY - JOUR

T1 - Step-by-step growth of an epitaxial Si4O5N3 single layer on SiC(0001) in ultrahigh vacuum

AU - Mizuno, Seigi

AU - Matsuo, Tomomi

AU - Nakagawa, Takeshi

PY - 2017/7/1

Y1 - 2017/7/1

N2 - An epitaxial single Si4O5N3 layer was formed on a SiC(0001) surface using a step-by-step growth method in an ultrahigh vacuum condition. First, a silicon adsorbed SiC(0001) surface was prepared. The surface was then exposed to NO gas at 950 °C in order to form a Si2ON3 layer. Silicon was deposited on this surface and annealed to adjust the amount of adsorbed Si atoms. Finally, the surface was oxidized at 800 °C. The formation of a Si4O5N3 layer was confirmed by low-energy electron diffraction analysis, Auger electron spectroscopy, and scanning tunneling microscopy. Using this procedure, we were able to suppress the growth of graphite-like clusters on the surface, although silicate-like clusters still remained.

AB - An epitaxial single Si4O5N3 layer was formed on a SiC(0001) surface using a step-by-step growth method in an ultrahigh vacuum condition. First, a silicon adsorbed SiC(0001) surface was prepared. The surface was then exposed to NO gas at 950 °C in order to form a Si2ON3 layer. Silicon was deposited on this surface and annealed to adjust the amount of adsorbed Si atoms. Finally, the surface was oxidized at 800 °C. The formation of a Si4O5N3 layer was confirmed by low-energy electron diffraction analysis, Auger electron spectroscopy, and scanning tunneling microscopy. Using this procedure, we were able to suppress the growth of graphite-like clusters on the surface, although silicate-like clusters still remained.

UR - http://www.scopus.com/inward/record.url?scp=85014795255&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85014795255&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2017.03.004

DO - 10.1016/j.susc.2017.03.004

M3 - Article

VL - 661

SP - 22

EP - 27

JO - Surface Science

JF - Surface Science

SN - 0039-6028

ER -