Step-by-step growth of an epitaxial Si₄O₅N₃ single layer on SiC(0001) in ultrahigh vacuum

Engineering & Materials Science

• Ultrahigh vacuum 100%
• Low energy electron diffraction 23%
• Scanning tunneling microscopy 18%
• Silicon 16%
• Auger electron spectroscopy 16%
• Silicates 12%
• Atoms 11%
• Graphite 10%
• Gases 6%

Physics & Astronomy

• ultrahigh vacuum 63%
• silicon 11%
• adatoms 10%
• Auger spectroscopy 10%
• electron spectroscopy 10%
• silicates 10%
• scanning tunneling microscopy 10%
• graphite 9%
• electron diffraction 9%
• gases 5%

Chemical Compounds

• Vacuum 50%
• Surface 20%
• Molecular Cluster 13%
• Low Energy Electron Diffraction 13%
• Auger Electron Spectroscopy 12%
• Scanning Tunneling Microscopy 10%
• Gas 5%