Strain distribution in freestanding Si/SixNy membranes studied by transmission electron microscopy

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Strain was induced in a bridge-shaped freestanding Si membrane (FSSM) by depositing an amorphous SixNy layer to surround the Si membrane. Convergent beam electron diffraction revealed that compressive strain is distributed uniformly along the horizontal direction in SixN y-deposited FSSM. On the other hand, strain decreases to almost zero at the ends of the FSSM, where the SixNy layer beneath the Si layer is replaced by a SiO2 buried oxide layer.

Original languageEnglish
Pages (from-to)6787-6791
Number of pages5
JournalThin Solid Films
Volume518
Issue number23
DOIs
Publication statusPublished - Sep 30 2010

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strain distribution
membranes
Transmission electron microscopy
Membranes
transmission electron microscopy
Electron diffraction
Oxides
electron diffraction
oxides

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Strain distribution in freestanding Si/SixNy membranes studied by transmission electron microscopy. / Gao, Hongye; Ikeda, Ken Ichi; Hata, Satoshi; Nakashima, Hideharu; Wang, Dong; Nakashima, Hiroshi.

In: Thin Solid Films, Vol. 518, No. 23, 30.09.2010, p. 6787-6791.

Research output: Contribution to journalArticle

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AU - Wang, Dong

AU - Nakashima, Hiroshi

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