Strain distribution in freestanding Si/SixNy membranes studied by transmission electron microscopy

Hongye Gao, Ken Ichi Ikeda, Satoshi Hata, Hideharu Nakashima, Dong Wang, Hiroshi Nakashima

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Strain was induced in a bridge-shaped freestanding Si membrane (FSSM) by depositing an amorphous SixNy layer to surround the Si membrane. Convergent beam electron diffraction revealed that compressive strain is distributed uniformly along the horizontal direction in SixN y-deposited FSSM. On the other hand, strain decreases to almost zero at the ends of the FSSM, where the SixNy layer beneath the Si layer is replaced by a SiO2 buried oxide layer.

Original languageEnglish
Pages (from-to)6787-6791
Number of pages5
JournalThin Solid Films
Issue number23
Publication statusPublished - Sep 30 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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