Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics

Takahiro Kawamura, Mitsutoshi Mizutani, Yasuyuki Suzuki, Yoshihiro Kangawa, Koichi Kakimoto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We simulated screw dislocations with the Burgers vector parallel to the [0001] direction in 4H-SiC by a classical molecular dynamics method. A stable structure of an extended dislocation generated by the dissociation of a screw dislocation was identified by calculating the strain energy caused by dislocation cores and stacking faults. As a result, we conclude that the most expected structure of the extended dislocation is made of partial dislocations with the Burgers vector b = 1/2c + 1/2c (c is equal to the thickness of one period in the c-axis direction of 4H-SiC) and the stacking fault that is parallel to the a-plane, and that the distance between the dislocation cores is less than about 44Å.

Original languageEnglish
Article number031301
JournalJapanese Journal of Applied Physics
Volume55
Issue number3
DOIs
Publication statusPublished - Mar 1 2016

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Screw dislocations
screw dislocations
Strain energy
Dislocations (crystals)
Molecular dynamics
molecular dynamics
Burgers vector
Stacking faults
crystal defects
energy
dissociation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics. / Kawamura, Takahiro; Mizutani, Mitsutoshi; Suzuki, Yasuyuki; Kangawa, Yoshihiro; Kakimoto, Koichi.

In: Japanese Journal of Applied Physics, Vol. 55, No. 3, 031301, 01.03.2016.

Research output: Contribution to journalArticle

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