Strain engineering the properties of graphene and other two-dimensional crystals

Mark A. Bissett, Masaharu Tsuji, Hiroki Ago

    Research output: Contribution to journalReview articlepeer-review

    139 Citations (Scopus)

    Abstract

    Graphene has been widely studied for its many extraordinary properties, and other two-dimensional layered materials are now gaining increased interest. These excellent properties make thin layer materials very attractive for integration into a wide variety of technologies, particularly in flexible optoelectronic devices. Therefore, gaining control over these properties will allow for a more focused design and optimisation of these possible technologies. Through the application of mechanical strain it is possible to alter the electronic structures of two-dimensional crystals, such as graphene and transition metal dichalcogenides (e.g. MoS2), and these changes in electronic structure can alter their behaviour. In this perspective we discuss recent advances in the strain engineering of thin layer materials, with a focus on using Raman spectroscopy and electrical transport to investigate the effect of strain as well as the effect of strain on the chemical functionalisation of graphene.

    Original languageEnglish
    Pages (from-to)11124-11138
    Number of pages15
    JournalPhysical Chemistry Chemical Physics
    Volume16
    Issue number23
    DOIs
    Publication statusPublished - Jun 21 2014

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)
    • Physical and Theoretical Chemistry

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