Strain in β-FeSi 2 modulated by Ge segregation in solid-phase growth of [a-Si/a-FeSiGe] n stacked structure

Taizoh Sadoh, Y. Murakami, A. Kenjo, T. Enokida, Tsuyoshi Yoshitake, Masaru Itakura, M. Miyao

Research output: Contribution to journalArticle

Abstract

Solid-phase growth of the [a-Si/a-FeSiGe] n (n: 1, 2, 4; total thickness: 500nm) stacked structure has been investigated. After annealing at 700°C, the [a-SiGe/β-FeSi 2 (Ge)] n stacked structures were formed. From the analysis of the X-ray diffraction spectra, it was found that β-FeSi 2 (Ge) was strained by 0.4-0.5% for n = 1. With increasing n, the strains decreased, which was due to segregation of Ge atoms from the a-FeSiGe layers to the a-Si layers. After annealing at 800°C, agglomeration of β-FeSi 2 occurred and Ge atoms vanished completely from the β-FeSi 2 lattice. Thus, nanocrystals of relaxed β-FeSi 2 and c-Si 0.7 Ge 0.3 were formed. These new structures can be useful for formation of opto-electrical devices.

Original languageEnglish
Pages (from-to)146-149
Number of pages4
JournalApplied Surface Science
Volume237
Issue number1-4
DOIs
Publication statusPublished - Oct 15 2004

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Annealing
Atoms
Crystal lattices
Nanocrystals
Agglomeration
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Strain in β-FeSi 2 modulated by Ge segregation in solid-phase growth of [a-Si/a-FeSiGe] n stacked structure . / Sadoh, Taizoh; Murakami, Y.; Kenjo, A.; Enokida, T.; Yoshitake, Tsuyoshi; Itakura, Masaru; Miyao, M.

In: Applied Surface Science, Vol. 237, No. 1-4, 15.10.2004, p. 146-149.

Research output: Contribution to journalArticle

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abstract = "Solid-phase growth of the [a-Si/a-FeSiGe] n (n: 1, 2, 4; total thickness: 500nm) stacked structure has been investigated. After annealing at 700°C, the [a-SiGe/β-FeSi 2 (Ge)] n stacked structures were formed. From the analysis of the X-ray diffraction spectra, it was found that β-FeSi 2 (Ge) was strained by 0.4-0.5{\%} for n = 1. With increasing n, the strains decreased, which was due to segregation of Ge atoms from the a-FeSiGe layers to the a-Si layers. After annealing at 800°C, agglomeration of β-FeSi 2 occurred and Ge atoms vanished completely from the β-FeSi 2 lattice. Thus, nanocrystals of relaxed β-FeSi 2 and c-Si 0.7 Ge 0.3 were formed. These new structures can be useful for formation of opto-electrical devices.",
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AU - Sadoh, Taizoh

AU - Murakami, Y.

AU - Kenjo, A.

AU - Enokida, T.

AU - Yoshitake, Tsuyoshi

AU - Itakura, Masaru

AU - Miyao, M.

PY - 2004/10/15

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N2 - Solid-phase growth of the [a-Si/a-FeSiGe] n (n: 1, 2, 4; total thickness: 500nm) stacked structure has been investigated. After annealing at 700°C, the [a-SiGe/β-FeSi 2 (Ge)] n stacked structures were formed. From the analysis of the X-ray diffraction spectra, it was found that β-FeSi 2 (Ge) was strained by 0.4-0.5% for n = 1. With increasing n, the strains decreased, which was due to segregation of Ge atoms from the a-FeSiGe layers to the a-Si layers. After annealing at 800°C, agglomeration of β-FeSi 2 occurred and Ge atoms vanished completely from the β-FeSi 2 lattice. Thus, nanocrystals of relaxed β-FeSi 2 and c-Si 0.7 Ge 0.3 were formed. These new structures can be useful for formation of opto-electrical devices.

AB - Solid-phase growth of the [a-Si/a-FeSiGe] n (n: 1, 2, 4; total thickness: 500nm) stacked structure has been investigated. After annealing at 700°C, the [a-SiGe/β-FeSi 2 (Ge)] n stacked structures were formed. From the analysis of the X-ray diffraction spectra, it was found that β-FeSi 2 (Ge) was strained by 0.4-0.5% for n = 1. With increasing n, the strains decreased, which was due to segregation of Ge atoms from the a-FeSiGe layers to the a-Si layers. After annealing at 800°C, agglomeration of β-FeSi 2 occurred and Ge atoms vanished completely from the β-FeSi 2 lattice. Thus, nanocrystals of relaxed β-FeSi 2 and c-Si 0.7 Ge 0.3 were formed. These new structures can be useful for formation of opto-electrical devices.

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