Strain in β-FeSi 2 modulated by Ge segregation in solid-phase growth of [a-Si/a-FeSiGe] n stacked structure

T. Sadoh, Y. Murakami, A. Kenjo, T. Enokida, T. Yoshitake, M. Itakura, M. Miyao

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Solid-phase growth of the [a-Si/a-FeSiGe] n (n: 1, 2, 4; total thickness: 500nm) stacked structure has been investigated. After annealing at 700°C, the [a-SiGe/β-FeSi 2 (Ge)] n stacked structures were formed. From the analysis of the X-ray diffraction spectra, it was found that β-FeSi 2 (Ge) was strained by 0.4-0.5% for n = 1. With increasing n, the strains decreased, which was due to segregation of Ge atoms from the a-FeSiGe layers to the a-Si layers. After annealing at 800°C, agglomeration of β-FeSi 2 occurred and Ge atoms vanished completely from the β-FeSi 2 lattice. Thus, nanocrystals of relaxed β-FeSi 2 and c-Si 0.7 Ge 0.3 were formed. These new structures can be useful for formation of opto-electrical devices.

Original languageEnglish
Pages (from-to)146-149
Number of pages4
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - Oct 15 2004

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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