Strain-induced magnetoresistance and magnetic anisotropy properties of Co/Cu multilayers

C. Rizal, P. Gyawali, I. Kshattry, R. K. Pokharel

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9 Citations (Scopus)

Abstract

[Co (t Co) nm/Cu 1.5 nm] 50 multilayers were grown onto 15-nm Cupolyimide buffer layers. The relationship between stress, σ, and strain, ε, for the [Co 1.0 nm/Cu 1.5 nm] 50 multilayers has been presented. The effects of induced strain on the magnetoresistance (MR) and magnetic anisotropy have been examined. The [Co 1.0 nm/Cu 1.5 nm] 50 multilayer exhibited a maximum MR ratio of 3.4 at a Co layer thickness of 1.0 nm, β of 0.1, and a strain of 1.5%. The multilayers exhibited a remarkable magnetic anisotropy with the easy axis of magnetization always lying in a plane perpendicular to the direction of the induced strain.

Original languageEnglish
Article number07C107
JournalJournal of Applied Physics
Volume111
Issue number7
DOIs
Publication statusPublished - Apr 1 2012

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anisotropy
buffers
magnetization

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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Strain-induced magnetoresistance and magnetic anisotropy properties of Co/Cu multilayers. / Rizal, C.; Gyawali, P.; Kshattry, I.; Pokharel, R. K.

In: Journal of Applied Physics, Vol. 111, No. 7, 07C107, 01.04.2012.

Research output: Contribution to journalArticle

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