Strain modulation of β-FeSi2 by Ge-segregation in solid-phase growth of [a-Si/a-FeSiGe]n multi-layer

Y. Murakami, A. Kenjo, Taizoh Sadoh, Tsuyoshi Yoshitake, Masaru Itakura, M. Miyao

Research output: Contribution to journalArticle

Abstract

Strain modulation of β-FeSi2 by Ge doping was investigated. By solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge 0.1]n layered structures, the [a-SiGe/β-FeSi 2-xGex]n multi-layered structures (n=1, 2, 4) were formed after annealing at 700°C. From the analysis of the x-ray diffraction spectra, it was found that β-FeSi1.3Ge0.7 strained by 0.4-0.5 % was formed for the sample with n=1. This value corresponded to the band gap modulation of 30 meV based on the theoretical calculation. The strains decreased with increasing n, which was due to that segregation of Ge atoms from the a-Fe0.4Si0.5Ge 0.1 layers to the a-Si layers became significant with increasing n. After annealing at 800°C, agglomeration of β-FeSi2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si 0.7Ge0.3 were formed. These new structures are useful for formation of opto-electrical devices.

Original languageEnglish
Pages (from-to)57-62
Number of pages6
JournalUnknown Journal
Volume796
Publication statusPublished - 2003

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annealing
Modulation
Annealing
agglomeration
Nanocrystals
diffraction
Energy gap
Agglomeration
Diffraction
Doping (additives)
X rays
Atoms
analysis
calculation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Strain modulation of β-FeSi2 by Ge-segregation in solid-phase growth of [a-Si/a-FeSiGe]n multi-layer. / Murakami, Y.; Kenjo, A.; Sadoh, Taizoh; Yoshitake, Tsuyoshi; Itakura, Masaru; Miyao, M.

In: Unknown Journal, Vol. 796, 2003, p. 57-62.

Research output: Contribution to journalArticle

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abstract = "Strain modulation of β-FeSi2 by Ge doping was investigated. By solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge 0.1]n layered structures, the [a-SiGe/β-FeSi 2-xGex]n multi-layered structures (n=1, 2, 4) were formed after annealing at 700°C. From the analysis of the x-ray diffraction spectra, it was found that β-FeSi1.3Ge0.7 strained by 0.4-0.5 {\%} was formed for the sample with n=1. This value corresponded to the band gap modulation of 30 meV based on the theoretical calculation. The strains decreased with increasing n, which was due to that segregation of Ge atoms from the a-Fe0.4Si0.5Ge 0.1 layers to the a-Si layers became significant with increasing n. After annealing at 800°C, agglomeration of β-FeSi2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si 0.7Ge0.3 were formed. These new structures are useful for formation of opto-electrical devices.",
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AU - Murakami, Y.

AU - Kenjo, A.

AU - Sadoh, Taizoh

AU - Yoshitake, Tsuyoshi

AU - Itakura, Masaru

AU - Miyao, M.

PY - 2003

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AB - Strain modulation of β-FeSi2 by Ge doping was investigated. By solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge 0.1]n layered structures, the [a-SiGe/β-FeSi 2-xGex]n multi-layered structures (n=1, 2, 4) were formed after annealing at 700°C. From the analysis of the x-ray diffraction spectra, it was found that β-FeSi1.3Ge0.7 strained by 0.4-0.5 % was formed for the sample with n=1. This value corresponded to the band gap modulation of 30 meV based on the theoretical calculation. The strains decreased with increasing n, which was due to that segregation of Ge atoms from the a-Fe0.4Si0.5Ge 0.1 layers to the a-Si layers became significant with increasing n. After annealing at 800°C, agglomeration of β-FeSi2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si 0.7Ge0.3 were formed. These new structures are useful for formation of opto-electrical devices.

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