Solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge0.1]n stacked-structures has been investigated. [a-Si/a-Fe0.4Si0.5Ge0.1]n/c-Si (n=1, 2, 4) samples were annealed at 700-900°C for 30 min in a vacuum. The grown layers were analyzed by using Auger electron spectroscopy, the X-ray diffraction, Raman spectroscopy, and the transmission electron microscopy. After annealing at 700°C, β-FeSi2(Ge) strained by 0.4-0.5% was successfully formed for the sample with n=1. The strains became small with increasing n, i.e., with thinning layer. In addition, superstructures consisting of β-FeSi2 and c-Si0.7Ge0.3 nanocrystals were obtained by Ge segregation after annealing at 800°C. These new structures are useful for fabrication of opto-electrical devices.
|Number of pages||3|
|Journal||Research Reports on Information Science and Electrical Engineering of Kyushu University|
|Publication status||Published - Sep 1 2003|
All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Electrical and Electronic Engineering