Strain modulation of β-FeSi2(Ge) formed by SPC of [a-Si/a-FeSiGe]n stacked-structure

Yuji Murakami, Masakazu Owatari, Tsuyoshi Yoshitake, Masaru Itakura, Taizoh Sadoh

Research output: Contribution to journalArticle

Abstract

Solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge0.1]n stacked-structures has been investigated. [a-Si/a-Fe0.4Si0.5Ge0.1]n/c-Si (n=1, 2, 4) samples were annealed at 700-900°C for 30 min in a vacuum. The grown layers were analyzed by using Auger electron spectroscopy, the X-ray diffraction, Raman spectroscopy, and the transmission electron microscopy. After annealing at 700°C, β-FeSi2(Ge) strained by 0.4-0.5% was successfully formed for the sample with n=1. The strains became small with increasing n, i.e., with thinning layer. In addition, superstructures consisting of β-FeSi2 and c-Si0.7Ge0.3 nanocrystals were obtained by Ge segregation after annealing at 800°C. These new structures are useful for fabrication of opto-electrical devices.

Original languageEnglish
Pages (from-to)189-191
Number of pages3
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume8
Issue number2
Publication statusPublished - Sep 1 2003

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

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