Strain modulation of β-FeSi2(Ge) formed by SPC of [a-Si/a-FeSiGe]n stacked-structure

Yuji Murakami, Masakazu Owatari, Tsuyoshi Yoshitake, Masaru Itakura, Taizoh Sadoh

Research output: Contribution to journalArticle

Abstract

Solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge0.1]n stacked-structures has been investigated. [a-Si/a-Fe0.4Si0.5Ge0.1]n/c-Si (n=1, 2, 4) samples were annealed at 700-900°C for 30 min in a vacuum. The grown layers were analyzed by using Auger electron spectroscopy, the X-ray diffraction, Raman spectroscopy, and the transmission electron microscopy. After annealing at 700°C, β-FeSi2(Ge) strained by 0.4-0.5% was successfully formed for the sample with n=1. The strains became small with increasing n, i.e., with thinning layer. In addition, superstructures consisting of β-FeSi2 and c-Si0.7Ge0.3 nanocrystals were obtained by Ge segregation after annealing at 800°C. These new structures are useful for fabrication of opto-electrical devices.

Original languageEnglish
Pages (from-to)189-191
Number of pages3
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume8
Issue number2
Publication statusPublished - Sep 1 2003

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Modulation
Annealing
Auger electron spectroscopy
Nanocrystals
Raman spectroscopy
Vacuum
Transmission electron microscopy
Fabrication
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

Cite this

@article{073980e820754292b25fb2208e2d6699,
title = "Strain modulation of β-FeSi2(Ge) formed by SPC of [a-Si/a-FeSiGe]n stacked-structure",
abstract = "Solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge0.1]n stacked-structures has been investigated. [a-Si/a-Fe0.4Si0.5Ge0.1]n/c-Si (n=1, 2, 4) samples were annealed at 700-900°C for 30 min in a vacuum. The grown layers were analyzed by using Auger electron spectroscopy, the X-ray diffraction, Raman spectroscopy, and the transmission electron microscopy. After annealing at 700°C, β-FeSi2(Ge) strained by 0.4-0.5{\%} was successfully formed for the sample with n=1. The strains became small with increasing n, i.e., with thinning layer. In addition, superstructures consisting of β-FeSi2 and c-Si0.7Ge0.3 nanocrystals were obtained by Ge segregation after annealing at 800°C. These new structures are useful for fabrication of opto-electrical devices.",
author = "Yuji Murakami and Masakazu Owatari and Tsuyoshi Yoshitake and Masaru Itakura and Taizoh Sadoh",
year = "2003",
month = "9",
day = "1",
language = "English",
volume = "8",
pages = "189--191",
journal = "Research Reports on Information Science and Electrical Engineering of Kyushu University",
issn = "1342-3819",
publisher = "Kyushu University, Faculty of Science",
number = "2",

}

TY - JOUR

T1 - Strain modulation of β-FeSi2(Ge) formed by SPC of [a-Si/a-FeSiGe]n stacked-structure

AU - Murakami, Yuji

AU - Owatari, Masakazu

AU - Yoshitake, Tsuyoshi

AU - Itakura, Masaru

AU - Sadoh, Taizoh

PY - 2003/9/1

Y1 - 2003/9/1

N2 - Solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge0.1]n stacked-structures has been investigated. [a-Si/a-Fe0.4Si0.5Ge0.1]n/c-Si (n=1, 2, 4) samples were annealed at 700-900°C for 30 min in a vacuum. The grown layers were analyzed by using Auger electron spectroscopy, the X-ray diffraction, Raman spectroscopy, and the transmission electron microscopy. After annealing at 700°C, β-FeSi2(Ge) strained by 0.4-0.5% was successfully formed for the sample with n=1. The strains became small with increasing n, i.e., with thinning layer. In addition, superstructures consisting of β-FeSi2 and c-Si0.7Ge0.3 nanocrystals were obtained by Ge segregation after annealing at 800°C. These new structures are useful for fabrication of opto-electrical devices.

AB - Solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge0.1]n stacked-structures has been investigated. [a-Si/a-Fe0.4Si0.5Ge0.1]n/c-Si (n=1, 2, 4) samples were annealed at 700-900°C for 30 min in a vacuum. The grown layers were analyzed by using Auger electron spectroscopy, the X-ray diffraction, Raman spectroscopy, and the transmission electron microscopy. After annealing at 700°C, β-FeSi2(Ge) strained by 0.4-0.5% was successfully formed for the sample with n=1. The strains became small with increasing n, i.e., with thinning layer. In addition, superstructures consisting of β-FeSi2 and c-Si0.7Ge0.3 nanocrystals were obtained by Ge segregation after annealing at 800°C. These new structures are useful for fabrication of opto-electrical devices.

UR - http://www.scopus.com/inward/record.url?scp=0346394785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346394785&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0346394785

VL - 8

SP - 189

EP - 191

JO - Research Reports on Information Science and Electrical Engineering of Kyushu University

JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

SN - 1342-3819

IS - 2

ER -